摘要:

By measuring flat‐band voltage as a function of light intensity it is possible to get information about the transport properties of an intact solar cell. We illustrate different kinds of behavior and show how these are related to solar cell performance.

ISSN:0021-8979    

DOI:10.1063/1.337381

出版商:AIP    

年代:1986

数据来源: AIP

摘要:

Closed‐form solutions for the transient conductivity and the electric field in optically controlled semiconductors have been obtained. The one‐dimensional calculations include important effects such as field‐independent electrode injection efficiency, displacement current, space charge, carrier trapping, and the influence of trapped charge on the field. The model is restricted to linear phenomena so that, for example, the carrier‐velocity dependence upon electric field is neglected. Despite such limitations, the model provides much insight into the operation of the semiconductor switch and is particularly applicable under conditions of low carrier generation rate and velocity saturation. A significant result of the model reveals that even for small departures of the electrode injection efficiency from unity, nonuniform and very intense electric fields will develop, particularly near the electrodes. These large fields may be exaggerated, however, since the onset of a field‐dependent injection efficiency will tend to limit such fields. A preliminary comparison of the theory and experiment for the current pulse was conducted for the case of a GaAs target, under conditions of low carrier generation rate. The comparison shows that the linear model is capable of explaining the observed current waveform under such conditions.

ISSN:0021-8979    

DOI:10.1063/1.337382

出版商:AIP    

年代:1986

数据来源: AIP

摘要:

An apparent contradiction between recent papers by Leiberich and Wolfe [Appl. Phys. Lett.47, 241 (1985)] and by Milani and Paroli [J. Appl. Phys.55, 2173 (1984)] on diffusion of hydrogen in magnetic garnets is reconciled. Hydrogen does diffuse in these garnets at temperatures as low as 250 °C even when they are not damaged by ion implantation, but only up to a saturation level of about 0.03 atoms per formula unit.

ISSN:0021-8979    

DOI:10.1063/1.337383

出版商:AIP    

年代:1986

数据来源: AIP

摘要:

Glow discharge mass spectrometry was used to study the occurrence of argon–oxygen ions in rf‐diode sputter deposition discharges. The results show that (ArO)+and (ArO2)+ions are formed over an extensive range of Ar–O2sputtering gas mixtures. The populations of these ions are independent of whether a ZnO or Au target is used and coupled in a manner that indicates (ArO2)+is formed first then dissociates to form (ArO)+. An associative ionization reaction between an Ar atom in a highly excited long‐lived Rydberg state and ground state O2is proposed to be responsible.

ISSN:0021-8979    

DOI:10.1063/1.337384

出版商:AIP    

年代:1986

数据来源: AIP

摘要:

A detailed infrared study has identified the spectral features of potassium titanate orthophosphate, KTiOPO4(KTP), between 4000 and 2200 cm−1. KTP single crystals grown by hydrothermal and flux methods were examined. By using ordinary and heavy water in separate runs to grow KTP crystals hydrothermally, features that depend on the presence of H2O or D2O in the growth process have been distinguished from features that do not. The effect of multiple OH sites in KTP has been linked with crystal quality and specific trace impurities, e.g., Fe+3.

ISSN:0021-8979    

DOI:10.1063/1.337385

出版商:AIP    

年代:1986

数据来源: AIP

摘要:

The refractive index of silicon has been measured at elevated temperatures at several different laser wavelengths of the HeNe and the Ar+cw lasers. This data, along with the reinterpretation of polarization modulation ellipsometry data, shows that the refractive index is linear with temperature (from 25 to ∼750 °C) and that the temperature coefficient of the refractive index increases as the wavelength of light decreases.

ISSN:0021-8979    

DOI:10.1063/1.337386

出版商:AIP    

年代:1986

数据来源: AIP

摘要:

The response characteristics of palladium‐gate metal‐insulator‐silicon field‐effect transistor (MISFET) structures to hydrogen are shown to be logarithmically related to the partial pressure of the gas. It is proposed that these palladium‐gate MIS structures should be considered as electrochemical devices where the metal/insulator structure behaves as a gas electrode. The results presented were obtained for hydrogen in air and therefore relate directly to the use of these devices as sensors for use in the ambient environment.

ISSN:0021-8979    

DOI:10.1063/1.337387

出版商:AIP    

年代:1986

数据来源: AIP