61. |
A new analysis of the linear high‐field magnetoresistance inn‐type PbTe films |
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Journal of Applied Physics,
Volume 59,
Issue 4,
1986,
Page 1388-1390
R. S. Allgaier,
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摘要:
This note reexamines the importance of geometrical effects on the high‐field linear magnetoresistance (MR) which has been observed in epitaxial films ofn‐type PbTe. It concludes that most of the MR, when it becomes large, is due to the end‐shorting effect first analyzed by Wick. A simple derivation of Wick’s result is presented for the limiting case when the Hall angle approaches 90°. The new interpretation implies that end effects spread further along the sample length than the idealized theory predicts. This may also be relevant to the quantum Hall‐effect regime, where deviations from precisely quantized values have been observed with increasing sample temperature.
ISSN:0021-8979
DOI:10.1063/1.336484
出版商:AIP
年代:1986
数据来源: AIP
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62. |
Propagation of ion acoustic waves close to a plasma boundary |
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Journal of Applied Physics,
Volume 59,
Issue 4,
1986,
Page 1390-1391
L. Schott,
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摘要:
It is observed that the electron component of an ion acoustic wave vanishes at a point in the transitional layer between the plasma and the ion sheath at an extended plane boundary. For the first time we present qualitative evidence that the ion component of the wave propagates beyond this point.
ISSN:0021-8979
DOI:10.1063/1.336485
出版商:AIP
年代:1986
数据来源: AIP
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63. |
Detection of thermal waves through modulated optical transmittance and modulated optical scattering |
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Journal of Applied Physics,
Volume 59,
Issue 4,
1986,
Page 1392-1394
Allan Rosencwaig,
Jon Opsal,
W. L. Smith,
D. L. Willenborg,
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摘要:
We show that variations in local optical constants induced by the presence of thermal waves can be used for thermal wave detection and analysis through measurements of thermal wave‐induced modulated transmittance and scattering.
ISSN:0021-8979
DOI:10.1063/1.336486
出版商:AIP
年代:1986
数据来源: AIP
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64. |
Dependence of inductively measured critical temperature on frequency and amplitude of applied field in aninsituNb3Sn superconductor |
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Journal of Applied Physics,
Volume 59,
Issue 4,
1986,
Page 1395-1397
M. Fukumoto,
H. Kodaka,
T. Okada,
H. Yoshida,
K. Yasohama,
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摘要:
A superconducting critical temperatureTchas been measured inductively on aninsitu‐formed Nb3Sn wire. The measurement has been carried out by varying the amplitude and frequency of the applied alternating magnetic field in the range from 0.001 to 100 G and from 0.2 to 100 kHz, respectively. It has been found that the normal to superconducting transition is dependent on the amplitude and slightly dependent on the frequency of the applied field.
ISSN:0021-8979
DOI:10.1063/1.336487
出版商:AIP
年代:1986
数据来源: AIP
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65. |
Low‐temperature heat capacities of Ni3Al |
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Journal of Applied Physics,
Volume 59,
Issue 4,
1986,
Page 1397-1398
James C. Ho,
Royce C. Liang,
D. P. Dandekar,
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摘要:
Heat capacities of two single‐crystal Ni3Al samples have been measured between 2 and 14 K. The data can be well fitted to the sum of a lattice and an electronic term, without a magnetic cluster contribution as previously reported by de Dood and de Chatel. The resulting Debye temperature values are comparable to those derived from elastic constant measurements, but the calorimetrically determined density of states at the Fermi level differs appreciably from that based on band‐structure calculations.
ISSN:0021-8979
DOI:10.1063/1.336488
出版商:AIP
年代:1986
数据来源: AIP
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66. |
Observation of electroluminescence from excitons bound to isoelectronic impurities in crystalline silicon |
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Journal of Applied Physics,
Volume 59,
Issue 4,
1986,
Page 1399-1401
T. G. Brown,
D. G. Hall,
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摘要:
We report the observation and characterization of luminescence near the wavelength 1.11 &mgr;m resulting from the electrical excitation and radiative decay of excitons bound to isoelectronic impurities in indium‐doped crystalline silicon.
ISSN:0021-8979
DOI:10.1063/1.336489
出版商:AIP
年代:1986
数据来源: AIP
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67. |
Decay of the running state in underdamped Josephson junctions |
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Journal of Applied Physics,
Volume 59,
Issue 4,
1986,
Page 1401-1403
R. Cristiano,
P. Silvestrini,
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摘要:
The decay of the running state in the presence of noise is investigated in underdamped Josephson junctions. In order to find an expression for the lifetime of such a state valid also in the region of bias currents near the deterministic switching valueIr, the nonstationary nature of the process is taken into account. Using the classical ‘‘first passage time’’ technique due to Stratonovich, an analytical expression for the lifetime of theV≠0 state is obtained.
ISSN:0021-8979
DOI:10.1063/1.336490
出版商:AIP
年代:1986
数据来源: AIP
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68. |
Erratum: ‘‘Variation of refractive index in strained InxGa1−xAs‐GaAs heterostructures’’ [J. Appl. Phys.58, 341 (1985)] |
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Journal of Applied Physics,
Volume 59,
Issue 4,
1986,
Page 1404-1404
Uptal Das,
Pallab K. Bhattacharya,
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ISSN:0021-8979
DOI:10.1063/1.337052
出版商:AIP
年代:1986
数据来源: AIP
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