摘要:

Schottky‐barrier field‐effect transistors have been fabricated first from 3C‐type SiC. Al‐dopedp‐type and nondopedn‐type 3C‐SiC epilayers were successively grown onp‐type Si substrates by chemical vapor deposition. Au and Al electrodes were used for Schottky‐barrier gate contacts and ohmic (source and drain) contacts forn‐type SiC. Transistor operation was observed for the first time for the field‐effect transistors of 3C‐SiC.

ISSN:0021-8979    

DOI:10.1063/1.337751

出版商:AIP    

年代:1986

数据来源: AIP

摘要:

Several biological effects resulting from exposure to millimeter waves have been reported. In an attempt to determine if millimeter waves might affect the conformational state of membranes, sonicated liposomes have been irradiated with millimeter waves at 41.650 GHz, stabilized in frequency to ±50 Hz. Raman spectra from the lipid vesicles were then collected in the conformational and in the C‐H stretching region. No changes in either the Raman peak locations or relative intensities were detected upon millimeter‐wave irradiation, either below or above the transition temperature of the phospholipid (41 °C).

ISSN:0021-8979    

DOI:10.1063/1.337752

出版商:AIP    

年代:1986

数据来源: AIP

摘要:

Pb0.8Sn0.2Te films, grown by flash evaporation, were irradiated with Nd:YAG laser pulses of various energy densities. Transmission electron microscopy, x‐ray diffraction, and electrical studies reveal that the irradiation significantly increases grain size, and the mobility increases by a factor of 5.

ISSN:0021-8979    

DOI:10.1063/1.337753

出版商:AIP    

年代:1986

数据来源: AIP

ISSN:0021-8979    

DOI:10.1063/1.337804

出版商:AIP    

年代:1986

数据来源: AIP