摘要:

Ohmic contact properties of Pd/Ti bilayer to heavily dopedn+‐polycrystalline silicon, prepared by electron beam evaporation, were studied by using both electrical measurements and Rutherford backscattering spectroscopy. The electrical behavior of the contacts at different sintering conditions is explained by the corresponding chemical composition changes at the metal/silicon interface during the sintering process.

ISSN:0021-8979    

DOI:10.1063/1.352140

出版商:AIP    

年代:1992

数据来源: AIP

摘要:

Growth behavior of AlGaAs heteroepitaxial layers on GaAs (111)Aplanes has been studied for atmospheric pressure organometallic vapor phase epitaxy. The Al composition as well as the arsine partial pressure and the growth temperature are the influential factors for the surface morphology of epitaxial layers on (111)Aplanes. By increasing the Al composition of grown layers, the range of growth conditions for obtaining a smooth surface morphology does not change so much. But the range for controlling defect structures, such as pyramidal shape, shifts to lower arsine partial pressures, and/or higher growth temperatures. The Al0.3Ga0.7As growth rate remains constant even at a lower arsine partial pressure than for the GaAs growth. This indicates that the morphology change is due to the increase in the arsine dissociation efficiency when the trimethylaluminum partial pressure increases.

ISSN:0021-8979    

DOI:10.1063/1.352141

出版商:AIP    

年代:1992

数据来源: AIP

摘要:

The stability of the moving solidification interface of thin silicon films undergoing zone‐melting recrystallization with a graphite strip heater was examined numerically. Unstable growth of the interface occurred for scanning speeds ≥250 &mgr;m/s for typical processing conditions. The growth rate of the perturbed interface varied with scanning speed, showing a distinct increase at a velocity of 400 &mgr;m/s.

ISSN:0021-8979    

DOI:10.1063/1.352142

出版商:AIP    

年代:1992

数据来源: AIP

摘要:

The paper describes preparation and performance of single lateral mode buried heterostructure InGaAsP/InP, &lgr;=1.3 &mgr;m, laser diodes. It is shown that an improvement in the mesa etching and regrowth techniques permits obtaining laser diodes whose threshold current densities are about 1 kA/cm2and are practically independent of stripe width. The diodes thus prepared had threshold currents of 8–20 mA at a cavity lengthL=200–500 &mgr;m and a stripe width about 2–3 &mgr;m. The maximum continuous wave power in single lateral mode operation was 160 mW.

ISSN:0021-8979    

DOI:10.1063/1.352143

出版商:AIP    

年代:1992

数据来源: AIP