摘要:

Orientation‐controlled InP microcrystals are grown on planar SiO2substrates by reacting molten In thin films with vaporized phosphorus in a closed system. Indium phosphide crystals having a (111) texture of about 7 &mgr;m in size, grow at the periphery of the In islands when the substrate is heated at 500 °C under a phosphorus vaporizing temperature of 330 °C. When the In thin films are triangularly patterned, the in‐plane ⟨110⟩ crystal direction is aligned parallel to the pattern edges by the capillary force effect between the In liquid and InP crystal.

ISSN:0021-8979    

DOI:10.1063/1.335867

出版商:AIP    

年代:1985

数据来源: AIP

摘要:

The intrinsic carrier concentrations in Hg1−xCdxTe are calculated with the use of the Fermi–Dirac statistics thus expanding on our previous calculation which employed the Boltzmann statistics. The use of Boltzmann statistics for Hg1−xCdxTe is limited tox≥0.20 and is not appropriate for the narrow band gapx<0.20 compositions. Our present treatment improves on existing calculations by using composition and temperature dependent momentum matrix element squared, which is the input to the Kane’sk ⋅ ptheory, and by making no approximations to the band structure beyond those inherent to Kane’s theory. We find that our results forx≥0.20 using both statistics are in excellent agreement. We also compare our results with those of Hansen and Schmit. Good agreement is found for the range of 0.15≤x≤0.40.

ISSN:0021-8979    

DOI:10.1063/1.335868

出版商:AIP    

年代:1985

数据来源: AIP

摘要:

Silicon samples implanted with As in the 1014–1016cm−2dose range and at a beam current density of 10 &mgr;A cm−2were analyzed by reflectance and Rutherford backscattering measurements. TheE1andE2reflectance structures disappear at a dose of 1015cm−2and reappear red shifted at 1016cm−2, as a consequence of the self‐annealing during high‐dose‐rate implantation. The red shift ofE1andE2has been quantitatively accounted for by calculations in a multilayer damage structure. The free‐carrier density determined by the infrared response correlates with the substitutional concentration of As measured by channeling effect. The optical response has been measured in laser annealed samples for comparison.

ISSN:0021-8979    

DOI:10.1063/1.335869

出版商:AIP    

年代:1985

数据来源: AIP

摘要:

The oscillating spatial modes of a phase‐locked injection laser array are observed by spectrally resolving its far‐field radiation pattern. The origin of the observed far fields is not consistent with a uniform array of emitters with equal coupling between the elements. When the array is placed in an external cavity containing a mirror, it is possible to select individual spatial modes of the compound resonator, including the fundamental mode. Operation of a phase‐locked laser array in conjunction with an external resonator is shown to be a useful technique for spatial mode selection.

ISSN:0021-8979    

DOI:10.1063/1.335870

出版商:AIP    

年代:1985

数据来源: AIP

摘要:

Al0.2Ga0.8Asp+‐njunction solar cells were fabricated by molecular beam epitaxy (MBE) and the relationship between cell properties and growth conditions was examined. It was found that growth temperature strongly influenced the minority carrier diffusion length in cell layers. At a growth temperature of 700 °C, minority carrier diffusion length was much improved and a high conversion efficiency of 12.9% (1 sun AM1.5, for an active area) was obtained.

ISSN:0021-8979    

DOI:10.1063/1.335871

出版商:AIP    

年代:1985

数据来源: AIP

摘要:

A phase‐locked laser diode array with three index waveguides is described. The array has a novel structure which prevents channels from being etched back. As the result, the waveguide elements in the array are very uniform. A stable 180° phase mode oscillation is obtained up to 50‐mW output power in the single longitudinal mode and three supermodes are observed simultaneously above 50‐mW output power. The near‐field patterns and the far‐field patterns of these supermodes are in good agreement with the theoretical results.

ISSN:0021-8979    

DOI:10.1063/1.335872

出版商:AIP    

年代:1985

数据来源: AIP

摘要:

The relationship between the characteristics of the emission contour of the self‐reversed line Tl‐5350 A˚ for a path through the arc axis and the operating pressure of Tl has been studied for a Hg–T1I discharge. The estimated pressure of Tl agrees with results from a method involving intensity of the optically thin line Tl‐6550 A˚ and chemical reactions.

ISSN:0021-8979    

DOI:10.1063/1.335873

出版商:AIP    

年代:1985

数据来源: AIP

摘要:

We use an AT‐cut quartz resonator with metal electrodes as the substrate. The material properties of the quartz are well characterized, and the resonant frequency can be determined accurately (1 part in 108or better). When a particle was placed on the electrode, the resonant frequency increased, contrary to mass loading theory. If the particle‐resonator system is modeled mechanically as a coupled oscillator system, indeed the resonant frequency should increase. The increase is determined by the bonding force constant between particle and substrate, which we calculate. Experimental data on the autohesion force constants of Au spheres on etched Au electrodes in air is presented.

ISSN:0021-8979    

DOI:10.1063/1.335874

出版商:AIP    

年代:1985

数据来源: AIP

摘要:

Low‐pressure plane impact experiments performed on Fe‐32 wt. % Ni‐0.035 wt. % C alloy revealed, after recovery, markings which are attributed to shock‐induced inhomogeneities. Shear of the material does not occur homogeneously, but in preferential planar regions. These regions are made visible by a martensitic transformation [fcc (austenite)→bcc (martensite)] produced by the tensile pulses generated by the reflection of the compressive shock wave at a free surface. The bands with higher plastic deformation served as preferential nucleation sites for martensitic transformation. The formation of these bands is attributed to inhomogeneous yielding due to work softening of the material during tensile loading.

ISSN:0021-8979    

DOI:10.1063/1.335875

出版商:AIP    

年代:1985

数据来源: AIP

摘要:

Hall electron mobilities in Ga1−xAlxAs alloys for various compositions have been analyzed using the Matthiessen’s rule and Monte Carlo simulation technique. Both these methods provide an excellent fit to the experimental data, providing the usefulness of Matthiessen’s rule. However, the Monte Carlo method gives mobilities at 300 K which are slightly lower (<10%) than those obtained from Matthiessen’s rule. For a typical alloy composition Ga0.70Al0.30As investigated in the temperature interval 80≲T≲300 K, the maximum deviation between the two results is found to be about 14% at 100 K.

ISSN:0021-8979    

DOI:10.1063/1.335876

出版商:AIP    

年代:1985

数据来源: AIP