摘要:

The examples given by Graneau do not contradict the equivalence of the two laws in magnetostatics. Both laws give the same magnetic force per unit volume, which is normal to the current density. The stress in a conductor due to this applied force then follows from the mechanical laws of the conductor and its contraints.

ISSN:0021-8979    

DOI:10.1063/1.335744

出版商:AIP    

年代:1985

数据来源: AIP

摘要:

The theory of free‐carrier absorption is given for quasi‐two‐dimensional semiconducting structures when the carriers are scattered by nonpolar optical phonons and the radiation field is polarized in the plane of the layer. The absorption coefficient is calculated and is found to be an oscillatory function of the thickness of the layer and is enhanced over its bulk value for low values of thickness of the layer. Separate peaks associated with transitions involving phonon emission and absorption are observed. The results are interpreted in terms of phonon‐assisted transitions between size quantized subbands.

ISSN:0021-8979    

DOI:10.1063/1.335745

出版商:AIP    

年代:1985

数据来源: AIP

摘要:

Expressions for thermopower in semiconducting quantum well wires are obtained when electrons are scattered by acoustic phonons via deformation potential coupling. In the size quantum limit, in nondegenerate semiconductors, the thermopower is found to be enhanced over its bulk value in a certain range of transverse dimension of the wire. The enhancement is found to increase with the decrease of temperature.

ISSN:0021-8979    

DOI:10.1063/1.335746

出版商:AIP    

年代:1985

数据来源: AIP

摘要:

Resonant interaction of an electron beam with a relativistically strong electromagnetic wave of right‐hand circular polarization propagating collinearly along a dc magnetic fieldB0has been studied analytically. The analysis has taken the full nonlinearity of the relativistic effect into account. The result of the relativistic effect on the resonant interaction is to cause the wave intensity to oscillate at a frequency near (&OHgr;0/2&ohgr;)1/2&ohgr;p/&ggr;0. It is found that there is an upper bound on the transverse velocity of the electron achievable through the interaction.

ISSN:0021-8979    

DOI:10.1063/1.335747

出版商:AIP    

年代:1985

数据来源: AIP

摘要:

We have demonstrated submicrometer‐resolution lithography by ultraviolet laser‐induced radical etching. We previously showed that this method can provide highly specific and efficient etching of various refractory metal/insulator and semiconductor/insulator substrate combinations.

ISSN:0021-8979    

DOI:10.1063/1.335748

出版商:AIP    

年代:1985

数据来源: AIP

摘要:

Close spaced vapor transport (CSVT) epitaxial layers have been grown under water vapor partial pressurepranging from 5×10−2to 5 mm Hg for source temperatures of 800 and 850 °C and a substrate temperature of 730 °C, using undoped high‐purity GaAs as source material and ⟨100⟩ chromium doped high‐resistivity GaAs as substrate. From Hall measurements, all layers were found to ben‐type with a majority carrier concentration in the range of (2–3) ×1017cm−3and a mobility 3100–3600 cm2 V−1 s−1aspvaries from 5.0 to 5×10−2mm Hg. Photoluminescence measurements show the following dominant recombination processes: an exitonic peak at 1.514 eV, a free band acceptor at 1.498 eV, a donor acceptor at 1.490 eV, and two peaks involving complexes at 1.47 and 1.42 eV. These peaks depend on the water vapor pressure: for low values ofponly the exitonic peaks exist; aspincreases the photoluminescence becomes less efficient until it disappears forp=5.0 mm Hg. This study shows that CSVT‐GaAs epilayers grown under proper conditions have high quality and could be used for producing some electronic devices.

ISSN:0021-8979    

DOI:10.1063/1.335749

出版商:AIP    

年代:1985

数据来源: AIP

摘要:

The current‐voltage characteristics for Schottky barrier diodes with series resistance are discussed. It is shown that by using Norde’s functionF(V)=V/2−(kT/q)ln(I/SAT2) at two different temperatures, barrier height,n‐value or ideality factor, and series resistance can be determined even in the case 1<n<2.

ISSN:0021-8979    

DOI:10.1063/1.335750

出版商:AIP    

年代:1985

数据来源: AIP

摘要:

The stimulated emission cross section is calculated on the basis of emission spectrum and spontaneous lifetime measurements. The maximum stimulated emission cross section is determined to be 0.69×10−20cm2. A comparison is made between the calculated stimulated emission cross section and one which has been determined from laser oscillation experiments. Fair agreement between them is obtained within a 20% error at wavelengths from 770 to 810 nm.

ISSN:0021-8979    

DOI:10.1063/1.335751

出版商:AIP    

年代:1985

数据来源: AIP

摘要:

Electrical and photoelectric properties of glow‐discharged hydrogenated silicon films are measured as a function of hydrogen dilution. In the case of films deposited under the condition of highly diluted silane, microcrystalline states are formed accompanying remarkable decreases in the optical gap, the activation energy of the dark conductivity, and the photoluminescence intensity. However, it is significant that the room‐temperature photoconductivity is not critically dependent on microcrystalline formation. The temperature dependence of the photoconductivity is drastically different depending on whether the film is in an amorphous or microcrystalline state.

ISSN:0021-8979    

DOI:10.1063/1.335752

出版商:AIP    

年代:1985

数据来源: AIP

摘要:

Hydrogenated amorphous silicon solar cells were fabricated by photochemical vapor deposition. A three‐separate‐chamber system was newly developed to reduce the contamination of the dopant elements as well as oxygen or water originated by the loading and unloading procedure. Wide optical band‐gap hydrogenated amorphous silicon carbide was prepared using acetylene (C2H2) for theplayer. The deposition conditions for each layer were optimized and the highest‐energy conversion efficiency of 9.64% was obtained. This high conversion efficiency was mainly attributed to the large short‐circuit current which indicated that the quality of theilayer is reasonably good.

ISSN:0021-8979    

DOI:10.1063/1.335724

出版商:AIP    

年代:1985

数据来源: AIP