摘要:

The local distortion in the indium‐doped semi‐insulating GaAs has been evaluated by means of ion channeling experiments along three directions for various indium concentrations up to 6.3×1020/cm3. The local distortion due to the indium doping gradually increases with the indium concentration, accompanied by the increase in minimum yield along the ⟨100⟩, ⟨110⟩, and ⟨111⟩ axes. The increase of the local distortion is independent of the crystal growth method.

ISSN:0021-8979    

DOI:10.1063/1.344993

出版商:AIP    

年代:1990

数据来源: AIP

摘要:

The scattering processes inside the quantum well, which destroy the coherency of the wave function of the electron in a double‐barrier resonant tunneling structure, are modeled by an imaginary scattering potential. The reflection coefficient, which is nonzero for an asymmetric structure without the imaginary potential, becomes zero at the resonance energy of the structure having an imaginary potential of a particular magnitude. The dependence of this particular magnitude of the imaginary potential on the ratio of the thicknesses of the two barriers is examined. For a structure in which one of the barriers is infinitely wide, this particular magnitude of the imaginary potential is equal to the width of the resonance of the structure without the imaginary potential.

ISSN:0021-8979    

DOI:10.1063/1.344994

出版商:AIP    

年代:1990

数据来源: AIP

摘要:

A resistance deep level transient spectroscopy (DLTS) model is presented which shows how the surface electron traps in GaAs metal‐semiconductor field‐effect transistors may result in the extensively reported signals attributed to hole trapping at the channel and substrate interface. By considering the detailed electron capture and emission processes of the surface states, the following have been successfully explained for the strong dependence of the surface state DLTS peak height on the device geometry and temperature: (i) the device geometry dependence of DLTS peak height is found to result from the fact that the amount of surface states involved in electron capture and emission in a DLTS study is proportional to the dimension of the ungated region; (ii) the drastic decrease of surface state DLTS peak height with decreased temperature is shown to be a direct result of the strong temperature dependence of the surface leakage current; and (iii) it is shown that the ‘‘holelike’’ DLTS signals can be used directly to determine the surface electron trap energy levelET.

ISSN:0021-8979    

DOI:10.1063/1.344995

出版商:AIP    

年代:1990

数据来源: AIP

摘要:

ZnSe is a semiconductor with a direct band gap of 2.68 eV at room temperature, which makes it one of the most important materials for blue electroluminescent devices and short wavelength laser diodes. In this communication, heteroepitaxial growth of ZnSe on a GaAs/Si substrate by low‐pressure organometallic chemical vapor deposition is reported. The ZnSe/GaAs/Si epilayer exhibits a uniform surface morphology. Strong photoluminescence near‐band‐edge emission was observed. The thickness of the GaAs buffer layer seems to be an important factor in the energy shift of the photoluminescence peak.

ISSN:0021-8979    

DOI:10.1063/1.344996

出版商:AIP    

年代:1990

数据来源: AIP

摘要:

Intersubband transitions in GaAs/AlxGa1−xAs quantum wells have been studied as a function of the doping level by Raman scattering and infrared absorption. Then‐type dopant concentration placed in the well was varied between 1×1018and 8×1018cm−3. With increasing doping level Raman scattering reveals a frequency down‐shift of the single‐particle intersubband transition and a shift to higher frequencies of the collective intersubband plasmon‐phonon mode. The resonance in infrared absorption follows closely the collective mode observed in Raman scattering, demonstrating clearly that the doping‐dependent depolarization shift of the absorption peak is an important parameter that must be taken into account in device design. Possible models for the frequency down‐shift of the single‐particle transition are also discussed.

ISSN:0021-8979    

DOI:10.1063/1.344997

出版商:AIP    

年代:1990

数据来源: AIP

摘要:

The effects of charge trapping and interface trap generation in fully processed metal/oxide/semiconductor (MOS) structures with wet, dry, and ultradry oxides are investigated. This is done by measuring the electrical properties of MOS capacitors with these oxides after Fowler–Nordheim electron injection stress. The data show that ultradry oxides have more hole traps than the other two. In addition, the generation of interface traps and electron traps is smaller in the ultradry oxides than in the other two.

ISSN:0021-8979    

DOI:10.1063/1.344998

出版商:AIP    

年代:1990

数据来源: AIP

ISSN:0021-8979    

DOI:10.1063/1.346115

出版商:AIP    

年代:1990

数据来源: AIP