摘要:

Platinum‐silicon alloys have been prepared over a wide composition range by reactive magnetron sputtering of platinum in a SiH4plasma. Studies on the stoichiometry of the films show that it depends sensitively on the silane partial pressure and the cathode potential. An analysis of the intensities of the emission lines of platinum and hydrogen present in the plasma indicates that at lower silicon concentrations the stoichiometry of the film bears a one‐to‐one correspondence with the stoichiometry of the plasma. X‐ray diffraction studies on the films deposited at room temperature show metastable products such as extended solid solutions on either side of the equilibrium phase field and the formation of a bcc phase (a=4.169 A˚) for the Pt67Si33alloy. Stoichiometric intermetallic phases Pt2Si, PtSi, and PtSi2have been synthesized by depositing the films at 100, 300, and 500 °C, respectively.

ISSN:0021-8979    

DOI:10.1063/1.334824

出版商:AIP    

年代:1985

数据来源: AIP

摘要:

Electrical and optical properties of boron‐ or phosphorus‐doped new hydrofluorinated amorphous silicon (a‐Si:F:H) are experimentally studied. This newa‐Si:F:H is produced by using intermediate species SiF2and H2gas mixture instead of using SiH4gas or SiF4and H2gas mixture. It is found that the doping efficiency for boron or phosphorus in thisa‐Si:F:H film is slightly better than that of conventional hydrogenated amorphous silicon (a‐Si:H), and also that the optical band gap of thisa‐Si:F:H hardly changes for the increase of conductivity due to boron doping while that ofa‐Si:H is apparently decreased.

ISSN:0021-8979    

DOI:10.1063/1.334825

出版商:AIP    

年代:1985

数据来源: AIP

摘要:

The growth of unintentionally doped indium phosphide by low pressure metalorganic chemical vapor deposition (LPMOCVD) using triethlylindium and phosphine has been investigated by low temperature photoluminescence (PL). Pregrowth annealing was found to result in improved crystalline quality of the seed surface. The predominant acceptor impurity on the annealed substrate surface and in the initial epitaxial region (1200 A˚) was shown to be carbon. The major acceptor impurity in thicker epilayers further away from the substrate interface was determined to be Zn. Silicon was also identified from the PL spectra, though its concentration might be much smaller than that of zinc. No deep level impurities were observed in this material. Most important of all, the highly resolved exciton PL spectrum demonstrated that excellent quality InP comparable to the best material grown by vapor phase epitaxy could be grown by LPMOCVD without the need for phosphine cracking.

ISSN:0021-8979    

DOI:10.1063/1.335460

出版商:AIP    

年代:1985

数据来源: AIP

摘要:

Laser‐induced fast transient photopotentials were measured at Fe2O3film electrodes. A photopotential rise within 300 ns was interpreted in terms of charge separation processes in the film, considering the contributions from both the electron and the hole. The time course of the photopotential up to 10 &mgr;s was attributed to the electron–hole recombination process and the interfacial charge transfer.

ISSN:0021-8979    

DOI:10.1063/1.334826

出版商:AIP    

年代:1985

数据来源: AIP

摘要:

We have measured the rates for the depletion of silane and the formation of solid material, disilane, trisilane, and hydrogen under steady‐state conditions in a flowing dc silane discharge in the presence of a heated substrate. The depletion rate of silane depends linearly on discharge current whereas the film yield and hydrogen yield increase superlinearly and the disilane and trisilane yields increase sublinearly with current. The yield of disilane is reduced in the presence of a hot substrate which we interpret as evidence that a significant fraction of disilane is produced by surface combination of SiH3radicals. We also find that the optical emission intensity of the BalmerH&agr;line is proportional to the partial pressure ofH2, and the intensity of the SiH 414‐nm band is unrelated to the film deposition rate.

ISSN:0021-8979    

DOI:10.1063/1.334827

出版商:AIP    

年代:1985

数据来源: AIP

摘要:

Localized bulk defects like diffusion length variations and structural defects like grain boundaries are analyzed in polycrystalline silicon solar cells using laser scanning and deep level transient spectroscopy techniques. The effect of hydrogen passivation on the role of grain boundaries has been studied.

ISSN:0021-8979    

DOI:10.1063/1.334828

出版商:AIP    

年代:1985

数据来源: AIP

摘要:

The previously postulated production of holes during the electrical breakdown of varistors has been directly verified. In some compositions band‐gap (3.2 eV) luminescence from the recombination of these holes with free electrons has been observed. The intensity of this luminescence is greater in varistor compositions exhibiting higher nonlinearity coefficients. It is also proportional to the square of the current which implies hole creation by impact ionization in the depletion region near the grain boundaries. This study used varistors of relatively simple chemical composition.

ISSN:0021-8979    

DOI:10.1063/1.334829

出版商:AIP    

年代:1985

数据来源: AIP

摘要:

A practical dual‐wavelength light‐emitting double‐diode (LEDD) device structure is presented. This device is relatively simple to fabricate and requires a single device‐to‐fiber alignment for packaging. Additionally, the individual wavelengths can be selected within the 0.8 to 1.6‐&mgr;m low‐loss spectral region of optical fibers. A dual‐wavelength LEDD emitting at 1.3 and 1.1 &mgr;m is demonstrated. Powers exceeding 10 &mgr;W for each wavelength at 50‐mA drive current are coupled into a lensed, graded index, 62.5‐&mgr;m core, 0.29‐NA optical fiber.

ISSN:0021-8979    

DOI:10.1063/1.335483

出版商:AIP    

年代:1985

数据来源: AIP

摘要:

Recent experiments have shown that the fill factor degradation of some hydrogen‐passivated dendritic web solar cells we reported earlier [Y. S. Tsuo and J. B. Milstein, Appl. Phys. Lett.45, 971 (1984)] is caused mainly by thin (less than 7 &mgr;m), damaged, front metal grids. A comparison of spectral response data for unpassivated and passivated cells shows that improvements occur mainly in the longer wavelength region, which indicates that bulk properties are enhanced by hydrogen passivation. We have also examined the stability of hydrogen‐passivated dendritic web solar cells over a three month period under outdoor test conditions and have not found any degradation. Electron‐beam‐induced current data have been obtained that show the hydrogen passivation of dislocations as well as grain boundaries in edge‐supported‐pulling silicon sheet solar cells.

ISSN:0021-8979    

DOI:10.1063/1.334830

出版商:AIP    

年代:1985

数据来源: AIP

摘要:

A new injection pulse phenomenon is reported which may have a variety of applications including the detection of infrared (IR) radiation. Injection current pulses were observed in simple circuits containing forward biased siliconp‐i‐ndiodes at liquid‐helium temperatures. Under exposure to IR radiation, the pulse rate was observed to increase approximately linearly with increasing incident IR intensity. The substantial voltage, current, and power output may eliminate the need for on‐chip amplifiers in many applications. Figures of merit are discussed, although the performance of the devices has not yet been optimized.

ISSN:0021-8979    

DOI:10.1063/1.334831

出版商:AIP    

年代:1985

数据来源: AIP