摘要:

Nucleation of sulfur hexafluoride in an argon carrier gas has been studied in very small supersonic adiabatic nozzle expansions. Light scattering is used to detect the onset of condensation, and high‐energy electron diffraction is used to ascertain cluster structure for a range of operating conditions where mixed clusters and/or binary nucleation can occur. For the limited range in SF6mole fraction, &khgr;0=0.01 to 0.03, both the thermodynamic and cluster diffraction data indicate that the SF6nucleates homogeneously with Ar accruing onto the condensed SF6after the Ar supersaturates.

ISSN:0021-8979    

DOI:10.1063/1.327590

出版商:AIP    

年代:1980

数据来源: AIP

摘要:

A vidicon target of ap‐i‐nstructure has been fabricated using amorphous silicon prepared by a rf glow discharge of silane (SiH4). A thin layer ofn‐typea‐silicon doped with phosphorus was provided between a photosensitive layer and a substrate coated with a transparent electrode (SnO2:Sb) to prohibit injection of holes. An excellent photoresponse was attained for visible light.

ISSN:0021-8979    

DOI:10.1063/1.327591

出版商:AIP    

年代:1980

数据来源: AIP

摘要:

The reaction between evaporated amorphous silicon films and chromium layers was studied using transmission electron microscopy and both transmission electron diffraction and reflection electron diffraction. Whena‐Si and Cr films were deposited in the same pumpdown, the formation of CrSi2was observed at temperatures as low as 400 °C. No reaction was observed whena‐Si was deposited on electrodeposited Cr.

ISSN:0021-8979    

DOI:10.1063/1.327592

出版商:AIP    

年代:1980

数据来源: AIP

摘要:

It is pointed out that very thin solar cells (1 &mgr;m thick or less) as, for example, amorphous silicon or cadmium sulfide cells, possessing a back‐surface reflector should be regarded as Fabry‐Perot cavities as far as the generation of electron‐hole pairs by light is concerned. The generation rate of electron‐hole pairs as a function of distance from the front surface exhibits characteristic interference patterns which are not negligible and must be accounted for in an analysis of the performance of such a cell.

ISSN:0021-8979    

DOI:10.1063/1.327593

出版商:AIP    

年代:1980

数据来源: AIP

摘要:

Photoconductivity has been measured as a function of temperature, photon energy, and electric field strength for amorphous Si:F:H alloys. The results clearly show that geminate recombination is not important in the visible region of the spectrum in these materials. The significance of these results for efficient solar photovoltaic energy conversion is discussed.

ISSN:0021-8979    

DOI:10.1063/1.327594

出版商:AIP    

年代:1980

数据来源: AIP

摘要:

A remarkable change of the photoluminescence (PL) intensity with the variation of the dc bias voltage is observed in Au/n‐InP Schottky surface. It is found from the observation of the surface band bending that the PL intensity is dominantly affected by the surface space‐charge layer. The maximum PL intensity is found to be attained at the flat‐band bias condition.

ISSN:0021-8979    

DOI:10.1063/1.327595

出版商:AIP    

年代:1980

数据来源: AIP

摘要:

A high‐resistivity layer often forms at the gallium arsenide layer‐substrate interface following preepitaxial growth heat treatment and subsequent layer growth. Aninsituetch‐back technique was developed for use on the substrate which resulted in the removal of the high‐resistivity interfacial layer. This simple technique yielded reproducible etch‐back versus time control and thus controllable removal of the high‐resistivity layer.

ISSN:0021-8979    

DOI:10.1063/1.327596

出版商:AIP    

年代:1980

数据来源: AIP

摘要:

A theoretical study of small superconductor‐normal‐superconductor Josephson junctions shows that while low‐critical‐current junctions do obey the resistively shunted junction model (RSJM), large‐current‐density junctions do not and are thereby much less sensitive to strong magnetic fields than the RSJM equivalent.

ISSN:0021-8979    

DOI:10.1063/1.327597

出版商:AIP    

年代:1980

数据来源: AIP

摘要:

An improved technique is described for selectively etching ’’windows’’ in GaAs crystals with Ga1−xAlxAs (0.30⩽x⩽ 0.80) epitaxial layers. A reduction factor of 10–50 in the sample preparation time is achieved with a good reproducibility.

ISSN:0021-8979    

DOI:10.1063/1.327598

出版商:AIP    

年代:1980

数据来源: AIP

摘要:

p‐channel andn‐channel amorphous‐silicon field‐effect transistors with thermally grown SiO2as a gate insulator have been investigated. On‐off current ratios of 4×106and 105were obtained forn‐ andp‐channel modes, respectively, and the electron and hole mobilities were about 0.1 and 2×10−3cm2/V/s, respectively.

ISSN:0021-8979    

DOI:10.1063/1.327599

出版商:AIP    

年代:1980

数据来源: AIP