摘要:

Vapor deposition simulation programs have been developed using Monte Carlo methods to determine the molecular dynamics of condensation, evaporation, and migration on the lattice. The simulation methods employed in the programs are developed in detail. The principle application will be to systems that permit a comparison with Honig's work, although the simulation methods are easily applied to a variety of other problems. The results of the simulations demonstrate that Honig's treatment is quite accurate and is a substantial improvement over previous treatments. This agreement also serves to build confidence in the use of Monte Carlo methods in simulating molecular dynamics for vapor deposition studies.

ISSN:0021-8979    

DOI:10.1063/1.1659113

出版商:AIP    

年代:1970

数据来源: AIP

摘要:

High‐resistivity Au&sngbnd;SiO2cermet films have been cosputtered. Their transport and structural properties have been examined and a model for electrical conduction is proposed. The electrical resistivity was found to be thermally activated, and the activation energy increased linearly as the metal content decreased. Activation energies varied from 0.01 to 0.07 eV. At a fixed temperature, the resistivity increased exponentially as the weight percent gold decreased. The cermets obeyed Ohm's law. No Hall effect was observed. Transmission electron micrographs showed very small (30–100 Å) discontinuous gold particles separated by very small SiO2regions. Films were deposited at 20°, 500°, 520°, and 600°C. Gold particle size increased with increasing gold content or with increasing substrate temperature. Only polycrystalline gold was observed by electron diffraction. The typical infrared spectrum of SiO2was recorded. 20°C cermets annealed at 600°C showed large particle growth and twinning. Electrical conduction in Au&sngbnd;SiO2cermets is described by a model for conduction in island metal films. Good agreement is obtained between activation energies calculated from measured gold particle diameters and separations, and measured activation energies. From gold particle separations and estimated barrier height, calculations show that charge carriers tunnel through the SiO2. Many other models were considered, but none fit all the experimental relationships.

ISSN:0021-8979    

DOI:10.1063/1.1659114

出版商:AIP    

年代:1970

数据来源: AIP

ISSN:0021-8979    

DOI:10.1063/1.1659116

出版商:AIP    

年代:1970

数据来源: AIP

ISSN:0021-8979    

DOI:10.1063/1.1659117

出版商:AIP    

年代:1970

数据来源: AIP

ISSN:0021-8979    

DOI:10.1063/1.1659118

出版商:AIP    

年代:1970

数据来源: AIP

ISSN:0021-8979    

DOI:10.1063/1.1659119

出版商:AIP    

年代:1970

数据来源: AIP

ISSN:0021-8979    

DOI:10.1063/1.1659120

出版商:AIP    

年代:1970

数据来源: AIP

ISSN:0021-8979    

DOI:10.1063/1.1659121

出版商:AIP    

年代:1970

数据来源: AIP

ISSN:0021-8979    

DOI:10.1063/1.1659122

出版商:AIP    

年代:1970

数据来源: AIP

ISSN:0021-8979    

DOI:10.1063/1.1659123

出版商:AIP    

年代:1970

数据来源: AIP