摘要:

Nitrocellulose functions as a self‐developing photoresist which can be patterned using pulsed excimer laser radiation. The material exhibits a threshold fluence for ablation of 20 mJ/cm2at a wavelength of 193 nm; this threshold results in higher contrast than can be obtained with most conventional photoresists. The effect of varying the laser wavelength has been examined. A simple model of ablative development has been used to predict the etch rate. The processing stability of the resist has been increased without changing the optical development rate by the addition of a dopant. The resolution of the resist is better than 0.3 &mgr;m.

ISSN:0021-8979    

DOI:10.1063/1.331961

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

P was implanted into 76‐mm‐diam (111) Si wafers at an energy of 40 keV with a dose of 2.54×1016/cm2. An increase in extended defects was found at a high insertion speed of wafer loading into a furnace at 1000–1100 °C in a N2ambient. The increase was due to nonuniformity in the temperature history and resultant thermal stress in the wafer, though no slip line was observed. The temperature nonuniformity was monitored by thermal‐oxide thickness nonuniformity for heating in a dry‐O2ambient. A low insertion speed resulted in uniform heating and reduced extended defects.

ISSN:0021-8979    

DOI:10.1063/1.331962

出版商:AIP    

年代:1983

数据来源: AIP