71. |
TheP‐TPhase Diagram of InSb at High Temperatures and Pressures |
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Journal of Applied Physics,
Volume 40,
Issue 1,
1969,
Page 409-413
Mario D. Banus,
Mary C. Lavine,
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摘要:
The pressure‐temperature phase diagram of InSb is refined to show the boundaries between the high‐pressure tetragonal (InSb II) and orthorhombic (InSb IV) phases and extended to about 125 kbar to locate the boundary of the new phase (InSb III). The existence of these structures as stable phases in their phase fields is demonstrated by high‐pressure, high‐temperature x‐ray studies and by x‐ray studies and superconductivity measurements on these phases retained by quenching to 77°K. The structures of InSb II and InSb IV are confirmed, and a hexagonal structure for InSb III is proposed. The hexagonal cell has the dimensions (at ∼90 kbar) ofa=6.10 Å andc=5.71 Å with a calculated density of 8.5 g/cc. Values are reported for the compressibility of phases InSb I, InSb III, and InSb IV and for the thermal expansion coefficients, under pressure, of phases InSb I and InSb IV.
ISSN:0021-8979
DOI:10.1063/1.1657069
出版商:AIP
年代:1969
数据来源: AIP
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72. |
Dysprosium‐Gadolinium Exchange Interactions in Gadolinium Metal |
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Journal of Applied Physics,
Volume 40,
Issue 1,
1969,
Page 414-415
Israel Nowik,
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摘要:
Recent experimental results on the temperature dependence of the hyperfine field acting on dysprosium impurity nuclei in gadolinium metal are used to check the validity of the molecular field model for such systems, and to reduce the Dy&sngbnd;Gd exchange coupling parameter. It is concluded that the molecular field model is able to explain successfully the experimental observations. The exchange field acting on dysprosium ions embedded in gadolinium metal, &bgr;He(0°K) /k=110±5°K, is approximately equal to the field acting on the gadolinium ions (&bgr;He(0°K) / k=98°K).
ISSN:0021-8979
DOI:10.1063/1.1657070
出版商:AIP
年代:1969
数据来源: AIP
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73. |
Evaporation of Mist by an Intense Light Beam |
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Journal of Applied Physics,
Volume 40,
Issue 1,
1969,
Page 416-417
G. L. Lamb,
R. B. Kinney,
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ISSN:0021-8979
DOI:10.1063/1.1657071
出版商:AIP
年代:1969
数据来源: AIP
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74. |
Fission‐Fragment Damage in Iridium |
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Journal of Applied Physics,
Volume 40,
Issue 1,
1969,
Page 417-418
J. H. Greenwood,
D. V. Morgan,
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ISSN:0021-8979
DOI:10.1063/1.1657072
出版商:AIP
年代:1969
数据来源: AIP
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75. |
Enhanced Solubility of Iron in Aluminum Obtained by Rapid Quenching Technique |
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Journal of Applied Physics,
Volume 40,
Issue 1,
1969,
Page 419-420
A. Tonejc,
A. Bonefacˇic´,
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ISSN:0021-8979
DOI:10.1063/1.1657073
出版商:AIP
年代:1969
数据来源: AIP
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76. |
The Deposition and Piezoelectric Characteristics of Sputtered Lithium Niobate Films |
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Journal of Applied Physics,
Volume 40,
Issue 1,
1969,
Page 420-421
N. F. Foster,
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ISSN:0021-8979
DOI:10.1063/1.1657074
出版商:AIP
年代:1969
数据来源: AIP
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77. |
Etching of Natrolite Cleavages |
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Journal of Applied Physics,
Volume 40,
Issue 1,
1969,
Page 421-423
M. S. Joshi,
M. A. Ittyachen,
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ISSN:0021-8979
DOI:10.1063/1.1657075
出版商:AIP
年代:1969
数据来源: AIP
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78. |
Effect of Carrier Drift on Helicon Propagation in Te‐Doped Bi‐Layered Structures |
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Journal of Applied Physics,
Volume 40,
Issue 1,
1969,
Page 423-424
W. R. Wisseman,
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ISSN:0021-8979
DOI:10.1063/1.1657076
出版商:AIP
年代:1969
数据来源: AIP
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79. |
Influence of Hydrogen on Multiple‐Electrode (Vacuum) Gap Characteristics |
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Journal of Applied Physics,
Volume 40,
Issue 1,
1969,
Page 424-425
Sol Schneider,
Anthony J. Buffa,
John E. Creedon,
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ISSN:0021-8979
DOI:10.1063/1.1657077
出版商:AIP
年代:1969
数据来源: AIP
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80. |
Reaction‐Process Dependence of Barrier Height between Tungsten Silicide andn‐Type Silicon |
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Journal of Applied Physics,
Volume 40,
Issue 1,
1969,
Page 425-426
Yokichi Itoh,
Norikazu Hashimoto,
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ISSN:0021-8979
DOI:10.1063/1.1657078
出版商:AIP
年代:1969
数据来源: AIP
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