摘要:

The electron effective masses in four epitaxial samples of In1−xGaxAsyP1−ylattice matched to InP (x?0.45y) have been measured by fitting temperature dependent Shubnikov‐de Haas data to the appropriate theory. Fory=0.764, 0.705, 0.756, and 0.467 we have obtained band‐edge effective masses of 0.0464, 0.0471, 0.0478, and 0.0639me, respectively. The compositions were obtained from the band gap using an empirical relation due to Nahoryetal. The method has been verified by applying it to bulk and epitaxial GaAs.

ISSN:0021-8979    

DOI:10.1063/1.327859

出版商:AIP    

年代:1980

数据来源: AIP

摘要:

A model developed by R.P. Kusy for predicting the composition at which the sudden onset of conductivity occurs in polymer/metal powder compacts is shown to yield quantitative results practically equivalent to those given by a previously published solution to the same problem. Significant differences nevertheless exist in the two theoretical developments leading to the concurring results; both approaches are appraised with reference to these differences.

ISSN:0021-8979    

DOI:10.1063/1.327860

出版商:AIP    

年代:1980

数据来源: AIP

摘要:

Electrical resistivity, temperature coefficient of resistivity, Hall coefficient, and Hall mobility of nickel films were measured simultaneouslyinsituat temperatures ranging from 30 to 150 °C. Ordinary (R0) and extraordinary (R1) parts of Hall constant were determined from the plot of Hall electric field per unit current density per thickness versus magnetic field for various thicknesses. An oscillatory behavior in theR1‐vs‐thickness plot was observed.

ISSN:0021-8979    

DOI:10.1063/1.327861

出版商:AIP    

年代:1980

数据来源: AIP

摘要:

Contact barrier heights are reported for twelve metals on zinc phosphide (Zn3P2). The results do not show a simple dependence on metal work function, but correlate with a chemical heat of reaction indicating the importance of chemical bonding at the metal/semiconductor interface.

ISSN:0021-8979    

DOI:10.1063/1.327862

出版商:AIP    

年代:1980

数据来源: AIP

摘要:

I‐Vcharacteristics due to quasiparticles are observed with electromagnetic radiations of 96 MHz and 12 GHz in In/Au/Pb–oxide–Pb/Au/Pb tunnel junctions. The situation is clearly understood with the equivalent circuit model where the Josephson junction is connected in parallel with a resistance and a capacitance. The behaviors of the quasiparticle current are well classified into two groups according to whether the ratio of the resistance and the capacitive impedance is larger than or smaller than unity.

ISSN:0021-8979    

DOI:10.1063/1.327863

出版商:AIP    

年代:1980

数据来源: AIP

摘要:

According to Tucker’s theory of the admittance and the noise of tunnel junctions there should be interesting quantum effects around 1011Hz, 2 °K, and a 0–1‐mV bias range. These effects are evaluated in detail for a metal‐oxide‐metal tunnel diode. The results apply equally top‐ntunnel junctions. The effects appear to be measurable.

ISSN:0021-8979    

DOI:10.1063/1.327864

出版商:AIP    

年代:1980

数据来源: AIP

摘要:

The insertion loss for the magnetic waves on a periodically corrugated YIG film magnetized normal to the film surface is deduced from the solution of the full magnetostatic boundary‐value problem taking into account the effect of the finite linewidth of the ferromagnetic resonance. It is found that the contribution to the insertion loss due to the distributed reflection and the mode conversion caused by the periodic surface corrugation is decreased as the resonance linewidth is increased.

ISSN:0021-8979    

DOI:10.1063/1.327865

出版商:AIP    

年代:1980

数据来源: AIP

摘要:

A sharp luminescence line at 1.51165 eV with the unusual properties of very large Zeeman splittings and very small splittings under uniaxial stress compared with typical shallow bound excitons was recently reported by Reynolds, Almassy, Litton, Nam, and McCoy [J. Appl. Phys. 49, 5336 (1978)]. We show that the description favored by these authors, electron‐hole recombination at either a neutral double donor–single acceptor or a double acceptor–single donor complex, is inadequate to account for the properties they report. In particular, the effects of the local axial field of the complex on the zero field and magnetic character of the electron‐hole states have been disregarded. We discuss possible interpretations and conclude that recombination within a biexciton bound to a neutral axial complex containing a biacceptor and two single donors can give a satisfactory explanation of all the unusual properties reported for the 1.51165‐eV line.

ISSN:0021-8979    

DOI:10.1063/1.327866

出版商:AIP    

年代:1980

数据来源: AIP

摘要:

Simultaneous microprofiling of semiconductor free carrier, donor, and acceptor concentrations was achieved for the first time from the absolute value of the free carrier absorption coefficient and its wavelength dependence determined by ir absorption in a scanning mode. Employing Ge‐ and Si‐doped melt‐grown GaAs, striking differences were found between the variations of electron concentration and those of ionized impurity concentrations. These results showed clearly that the electronic characteristics of this material are controlled by amphoteric doping and deviations from stoichiometry rather than by impurity segregation.

ISSN:0021-8979    

DOI:10.1063/1.327867

出版商:AIP    

年代:1980

数据来源: AIP

摘要:

Dispersive cathodoluminescence images from thin films of SiO2in a Test‐Element‐Group pattern of a conventional Large Scale Integrated circuit device were observed. Band A (290 nm) and band C (560 nm) of the cathodoluminescence were characteristic of a thermally grown SiO2covered with chemically vapor‐deposited (CVD) SiO2and may be useful for the study of irradiation induced damages in SiO2. Band B (415 nm) and band D (650 nm) were intense in the surface CVD SiO2and may provide information on process induced impurities in SiO2layers. The spatial resolution of a cathodoluminescence image is 2 &mgr;m, and it is possible to survey SiO2layers on a conventional LSI device with this technique.

ISSN:0021-8979    

DOI:10.1063/1.327868

出版商:AIP    

年代:1980

数据来源: AIP