摘要:

We report on a microstrip line structure able to sustain plasmas up to five bars of a He/Xe/HCl mixture, with good stability and reproducibility and without preionization of the mixture. The microwave power coupling has been characterized and the incoherent ultraviolet‐308 nm emission has been studied by means of time‐resolved spectroscopy.

ISSN:0021-8979    

DOI:10.1063/1.350507

出版商:AIP    

年代:1992

数据来源: AIP

摘要:

We report the photoluminescence study of low‐energy, low‐dose oxygen implantation induced compositional disordering of AlGaAs/GaAs quantum well structures. Significant disordering of both single and multiple AlGaAs/GaAs quantum wells has been achieved using low‐energy (155 keV) oxygen ion implantation with doses as small as 5 × 1013cm−2after a moderate annealing step. These doses are significantly lower than those reported previously (500 keV and 1016cm−2).

ISSN:0021-8979    

DOI:10.1063/1.350508

出版商:AIP    

年代:1992

数据来源: AIP

摘要:

Stoichiometric thin films of LiNbO3have been deposited on (100) silicon by a pulsed excimer laser deposition technique. By studying several cases of depositions in vacuum, oxygen, and argon, as well as oxygen‐argon mixture as ambients, it is brought out that the desired stoichiometry in the film can be attained only by having an appropriate oxygen‐argon mixture during deposition. The films have been characterized by x‐ray diffraction, infrared transmission, and spectroscopic ellipsometry techniques.

ISSN:0021-8979    

DOI:10.1063/1.350509

出版商:AIP    

年代:1992

数据来源: AIP

摘要:

The effects of pressure change on the homogeneous nucleation process are considered, including modeling of the dependence of the melt‐crystal interfacial energy on the applied pressure.

ISSN:0021-8979    

DOI:10.1063/1.350510

出版商:AIP    

年代:1992

数据来源: AIP

摘要:

The influence of applied substrate bias on diamond film deposition has been investigated in a magnetoactive microwave discharge. The films were deposited at substrate temperatures ∼600 °C at 5 Torr on silicon (111) substrates, and were characterized by Raman spectroscopy and scanning electron microscopy (SEM). Electrons or ions are drawn from the plasma by biasing the substrate positive or negative with respect to the grounded chamber wall. Without bias, nondiamond carbon peaks are obtained in Raman spectra and ball‐like features are observed in SEM micrographs. As the bias is increased, clear‐cut diamond faces appear and grown diamond particles change to the (100) and (111) phase. Positively biased films are more crystalline compared to films grown with negative bias.

ISSN:0021-8979    

DOI:10.1063/1.350511

出版商:AIP    

年代:1992

数据来源: AIP

摘要:

The steady state photocarrier grating technique has emerged as an important technique for measurement of the diffusion length in amorphous silicon. In this communication we show that morphological inhomogeneities lead to an overestimation of the magnitude of the diffusion length. The magnitude of this error cannot be easily estimated.

ISSN:0021-8979    

DOI:10.1063/1.350512

出版商:AIP    

年代:1992

数据来源: AIP

摘要:

It is pointed out that the experimental pitfalls in carrying out steady state photocarrier grating measurements, mentioned by Prabhuetal. are apparently very rare since the diffusion lengths ina‐Si:H determined by this method in many laboratories yield very similar results.

ISSN:0021-8979    

DOI:10.1063/1.350513

出版商:AIP    

年代:1992

数据来源: AIP

摘要:

In his recent paper ‘‘Rectification in heavily dopedp‐type GaAs/AlAs heterojunctions’’ [J. Appl. Phys.70, 1081 (1991)] Yoffe presented calculations of barrier heights and current‐voltage characteristics. Unfortunately, he adopted a typographical error in his basic equations. In this comment we show that significant differences in barrier heights and currents across heterojunctions arise, using the corrected expression for the calculations.

ISSN:0021-8979    

DOI:10.1063/1.350514

出版商:AIP    

年代:1992

数据来源: AIP

ISSN:0021-8979    

DOI:10.1063/1.351405

出版商:AIP    

年代:1992

数据来源: AIP

ISSN:0021-8979    

DOI:10.1063/1.351406

出版商:AIP    

年代:1992

数据来源: AIP