摘要:

Polarization‐dependent gain switching in a field‐effect quantum‐well laser with lateral current injection is studied. We use thek⋅pmethod for the optical dipole matrix and take into account the intraband relaxation. Gain switching is achieved by the field effect from a gate terminal in a lateral current injection quantum‐well laser structure. It is shown that the peak gain exhibits a red shift and the peak‐gain amplitude decreases with an increasing electric field for the TE mode. The TM mode is less affected by the external field.

ISSN:0021-8979    

DOI:10.1063/1.341214

出版商:AIP    

年代:1988

数据来源: AIP

摘要:

Eglash and co‐workers [J. Appl. Phys.61, 5159 (1987)] studying the dependence of the voltage intercept of theC−2‐Vplots for the engineered Schottky barrier diodes on the thickness of thep+region used an analytical expression of theC‐Vcharacteristics for the prediction of the voltage intercept. In this communication, a general expression is derived for theC‐Vcharacteristics of the Schottky contacts with changing dopant concentration at theM‐Sinterface. It is shown that the expression used by Eglash and co‐workers is a special case of this general expression.

ISSN:0021-8979    

DOI:10.1063/1.341215

出版商:AIP    

年代:1988

数据来源: AIP

摘要:

Luminescence spectra of variously silicon‐doped Al0.3Ga0.7As (Al0.3Ga0.7As@B:Si) single layers grown by molecular‐beam epitaxy were investigated as a function of silicon effusion‐cell temperature. A correlation between silicon incorporation as a complex involving SiAsand the existence of a deep broadband emission is suggested. To achieve this, in addition to photoluminescence, Hall effect, capacitance, and secondary ion mass spectroscopy measurements were also performed.

ISSN:0021-8979    

DOI:10.1063/1.341216

出版商:AIP    

年代:1988

数据来源: AIP

摘要:

The density‐of‐states effective masses for the heavy‐hole, light‐hole, and split‐off valence bands of GaAs have been calculated as a function of energy for each band. The calculations are based on a fullk⋅ptheory with the most recent values used for the matrix elements. Provision has been made for the effect of the split‐off energy on the matrix elements of the split‐off band. The results show important nonparabolicities which should be taken into account in modeling the valence band, and rational polynomial fits have been made for ease of computation.

ISSN:0021-8979    

DOI:10.1063/1.341217

出版商:AIP    

年代:1988

数据来源: AIP

摘要:

Recently, the xerographic depletion discharge (XDD) model has been applied extensively to chemically modifieda‐Se,a‐Se1−xTexalloys, anda‐As2Se3as well as toa‐Si:H films to study the nature of charge carrier generation from deep mobility gap states which control the dark decay of the electrostatic surface potential on a corona charged amorphous semiconductor. In the normal XDD model, the dark discharge involves bulk thermal generation of a mobile carrier of the same sign as the surface charge and its subsequent sweep out from the sample leaving behind an ionized center of opposite charge. It is shown that an ‘‘inverted depletion discharge’’ mechanism, which involves the thermal generation of a mobile charge carrier of the opposite sign to the surface charge and its subsequent drift to the surface and the resulting surface charge neutralization there, results in a dark discharge rate which has identical features as the normal XDD mechanism. In the normal XDD mechanism, the neutral region develops after the depletion time from the grounded electrode, whereas in the inverted XDD mechanism the neutral region grows from the surface. Furthermore, during inverted depletion discharge the surface charge is actually dissipated by neutralization, whereas in the normal depletion discharge model there is no such requirement over the time scale of the experiment. It is concluded that xerographic dark decay experiments alone cannot determine the sign of the thermally generated mobile carrier and that of the bulk space charge. Chemically modified amorphous selenium case is discussed as an example of surface potential decay resulting from bulk space‐charge buildup.

ISSN:0021-8979    

DOI:10.1063/1.341218

出版商:AIP    

年代:1988

数据来源: AIP