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71. |
Scattering of charge carriers in silicon surface layers |
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Journal of Applied Physics,
Volume 44,
Issue 2,
1973,
Page 923-925
Y. C. Cheng,
E. A. Sullivan,
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摘要:
The mobility of free carriers in a surface layer of a silicon metal‐oxide‐semiconductor transistor has been computed theoretically. It represents the first realistic approach which attempts to combine Coulomb, phonon, and surface‐roughness scattering to account for the mobility behavior over different temperatures and applied fields. An over‐all semiquantitative agreement between theory and experiment is obtained for both the channel mobility and magnetoresistance effect.
ISSN:0021-8979
DOI:10.1063/1.1662292
出版商:AIP
年代:1973
数据来源: AIP
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72. |
Calculation of transient photocurrents in insulators with trapped space charge |
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Journal of Applied Physics,
Volume 44,
Issue 2,
1973,
Page 926-928
A. M. Hermann,
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摘要:
The transit times and pulse shapes of photoinjected carriers moving in the presence of trapped space charge are derived. Two distributions are considered: uniformly trapped space charge, and trapped space charge decreasing exponentially in position from the injecting electrode. The pulse shapes are in some cases similar to those arising from transient space‐charge‐limited currents. The results in the case of the exponentially trapped space charge may have application in analysis of pulses taken in the presence of space charge trapped in the excitation layer or on the surface of insulators.
ISSN:0021-8979
DOI:10.1063/1.1662293
出版商:AIP
年代:1973
数据来源: AIP
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73. |
Sensitive LiTaO3pyroelectric detector |
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Journal of Applied Physics,
Volume 44,
Issue 2,
1973,
Page 929-931
C. B. Roundy,
R. L. Byer,
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摘要:
We have constructed and tested a sensitive LiTaO3pyroelectric detector with a measured NEP of 1.3×10−10W/(Hz)1/2, which is in good agreement with the theoretical value. LiTaO3has the advantages of being nonhygroscopic, relatively insensitive to ambient temperature, and has sufficient mechanical strength to polish to 10‐&mgr;‐thick samples. We show that no one figure of merit is sufficient for evaluating pyroelectric materials for use in low NEP detectors.
ISSN:0021-8979
DOI:10.1063/1.1662294
出版商:AIP
年代:1973
数据来源: AIP
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74. |
Erratum: Structure analysis of silicon dioxide films formed by oxidation of silane |
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Journal of Applied Physics,
Volume 44,
Issue 2,
1973,
Page 932-932
Naoyuki Nagasima,
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ISSN:0021-8979
DOI:10.1063/1.1662295
出版商:AIP
年代:1973
数据来源: AIP
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