摘要:

A theoretical model is introduced for analysis of the dispersions in a grating pair under a small angular misalignment. It is shown that the misalignment causes dispersion errors particularly for higher orders. ©1995 American Institute of Physics.

ISSN:0021-8979    

DOI:10.1063/1.359022

出版商:AIP    

年代:1995

数据来源: AIP

摘要:

A new process, which employs the photoresist or SiO2as a mask, the CH4‐CO2gas mixtures as the gas source of diamond deposition, and the HF:HNO3:H2O (1:1.1:10) solution as etching solution after the first step deposition, has been developed to improve the selective growth of diamond films. The longer etching time would result in increasing the selectivity during the following step of diamond film growth. The diamond nuclei growth on the undesired region would be removed and a thin SiO2layer would be formed using the above solution, therefore, increasing the selectivity. Scanning electron microscopy and electron spectroscopy for chemical analysis were used to examine the selective loss and morphological change for the as‐grown diamond films. ©1995 American Institute of Physics.

ISSN:0021-8979    

DOI:10.1063/1.359023

出版商:AIP    

年代:1995

数据来源: AIP

摘要:

Nitrogen effects on thermal donors and shallow thermal donors in nitrogen‐doped silicon have been investigated by means of the far infrared technique at low temperature (8 K). It is evident that nitrogen can suppress the formation of the thermal donor in silicon annealed at 450 °C. Nitrogen atoms are combined with oxygen atoms to produce the oxygen‐nitrogen complexes related with the shallow thermal donors. It is believed that nitrogen interacts with the oxygen atoms to form oxygen‐nitrogen complexes so as to reduce the thermal donors. ©1995 American Institute of Physics.

ISSN:0021-8979    

DOI:10.1063/1.359024

出版商:AIP    

年代:1995

数据来源: AIP

摘要:

Results on the passivation and antireflection coating of InGaAs:Fe metal‐semiconductor‐metal photodetectors using remote plasma‐enhanced chemical vapor deposited SiO2layers are reported. The deposition of SiO2on the detector surface leads to a reduction of the dark current by nearly two orders of magnitude at 5 V bias. Temperature‐dependent measurements of the leakage current characteristics indicate that the Schottky barrier height is substantially lowered near the metallization edges of the reversed biased contact fingers. The effective barrier height in the edge region, which controls the magnitude of the leakage current is determined by activation energy plots to be 0.14 eV for nonpassivated and 0.20 eV for passivated structures, respectively. Apart from the improvement of the dark current characteristics, the SiO2coating results in a drastic reduction of the photocurrent gain. The long‐term stability of the passivation is proved. ©1995 American Institute of Physics.

ISSN:0021-8979    

DOI:10.1063/1.359025

出版商:AIP    

年代:1995

数据来源: AIP

摘要:

The interfacial reaction of Nb thin films on (100) Si indicates the first phase nucleation of metal‐rich silicide and the occurrence of multiphases under certain annealing conditions. Nb3Si was identified as being the first nucleated phase at the annealing temperature of 550 °C, and subsequently Nb5Si3is found to be formed by annealing at 600 °C. The multiphases of Nb3Si, Nb5Si3, and NbSi2were observed to be formed simultaneously in the specimen annealed at 650 °C. The growth of NbSi2by the out‐diffusion of Si, which overcame the metal‐rich phase, was observed at annealing temperatures over 700 °C. ©1995 American Institute of Physics. 

ISSN:0021-8979    

DOI:10.1063/1.359584

出版商:AIP    

年代:1995

数据来源: AIP

ISSN:0021-8979    

DOI:10.1063/1.358956

出版商:AIP    

年代:1995

数据来源: AIP