摘要:

A new mastering process for optical‐data disks is described. The master disk consists of a glass substrate covered with an indium‐oxide film. Reactive ion‐beam etching with CCl4is used to selectively etch the information pits into the indium‐oxide layer. Pits with tapered walls are obtained by controlled erosion of the etch mask. This technique allows a better control of the pit shape than the conventional mastering process. Moreover, several metal copies can be made from the same master while conventional masters are destroyed after the first copy is made.

ISSN:0021-8979    

DOI:10.1063/1.335783

出版商:AIP    

年代:1985

数据来源: AIP

摘要:

PtSi films have been formed by different formation processes using sputtered Pt. Two annealing sequences are compared: a single‐temperature annealing at 550 °C and a three‐temperature annealing at 200–300–550 °C; and three annealing gases are compared: forming gas, nitrogen, and oxygen. Silicide films formed using the single‐temperature process all show incomplete reaction between Pt and Si, leaving a protective surface oxide layer of poor quality, which extends rather deeply into the PtSi film and is completely etched off byaquaregia. The silicide films formed by the three‐temperature process in forming gas, however, show a complete reaction between Pt and Si, and a thin surface oxide layer with excellent protection of the PtSi layer from the subsequentaquaregiaetching often needed for device fabrication.

ISSN:0021-8979    

DOI:10.1063/1.335784

出版商:AIP    

年代:1985

数据来源: AIP

摘要:

Great improvement in the electrical and optical properties of molecular‐beam‐epitaxy‐grown InAlAs was obtained by using InP buffer layers and high substrate temperatures of 555 °C. Undoped InAlAs layers arentype and the highest room temperature electron mobility is as high as 5100 cm2/V s with a carrier concentration of 1×1015cm−3. The room‐temperature photoluminescence spectrum has a sharp edge emission with a spectral half‐width as narrow as 42 meV.

ISSN:0021-8979    

DOI:10.1063/1.335785

出版商:AIP    

年代:1985

数据来源: AIP

摘要:

The effect of a bias electric field on the phase velocity of Lamb waves propagating in a piezoelectric plate has been investigated in order to develop an electroacoustic voltage sensor. Experiments were performed onYXandYZLiNbO3Lamb‐wave delay lines, used as the stabilizing element in the feedback loop of an oscillator, by measuring the fractional frequency change produced by a bias electric field normal to the plate surfaces. The results obtained have shown that Lamb‐wave sensors can exhibit a higher sensitivity and a better linearity than the corresponding Rayleigh‐wave devices.

ISSN:0021-8979    

DOI:10.1063/1.335786

出版商:AIP    

年代:1985

数据来源: AIP