| 71. |
Comment on ‘‘Generation phenomena of localized interface states induced by irradiation and post‐irradiation annealing at the Si/SiO2interface’’ [J. Appl. Phys.73, 4388 (1993)] |
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Journal of Applied Physics,
Volume 77,
Issue 5,
1995,
Page 2223-2223
S. Alexandrova,
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摘要:
It is pointed out in this comment that reliable models of Si/SiO2interface can be revealed from the energy distribution of the interface states only after careful estimation of inaccuracies in ideal interface modeling. ©1995 American Institute of Physics.
ISSN:0021-8979
DOI:10.1063/1.358808
出版商:AIP
年代:1995
数据来源: AIP
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| 72. |
Response to ‘‘Comment on ‘Generation phenomena of localized interface states induced by irradiation and post‐irradiation annealing at the Si/SiO2’ ’’ [J. Appl. Phys.77, 2223 (1995)] |
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Journal of Applied Physics,
Volume 77,
Issue 5,
1995,
Page 2224-2224
M. Kimura,
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PDF (68KB)
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摘要:
The accuracy of our measurements of the interface state [J. Appl. Phys.73, 4388 (1993)] is reassessed. The oxide thickness is found to be better than 1%, using techniques not only by high‐frequencyC‐Vand quasistaticC‐Vbut also by ellipsometry.
ISSN:0021-8979
DOI:10.1063/1.358809
出版商:AIP
年代:1995
数据来源: AIP
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