71. |
Graphical method to include temperature variation of activation energy in Hall data analysis |
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Journal of Applied Physics,
Volume 57,
Issue 12,
1985,
Page 5529-5531
Suman B. Iyer,
Vikram Kumar,
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摘要:
A graphical method is presented for Hall data analysis, including the temperature variation of activation energy due to screening. This method removes the discrepancies noted in the analysis of recently reported Hall data on Si(In).
ISSN:0021-8979
DOI:10.1063/1.334832
出版商:AIP
年代:1985
数据来源: AIP
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72. |
Driven diffusion including radial exchanges with the environment |
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Journal of Applied Physics,
Volume 57,
Issue 12,
1985,
Page 5532-5534
R. H. Zee,
J. M. Blair,
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摘要:
The time‐dependent partial differential equation governing the two‐dimensional driven diffusion in a cylindrical rod is solved analytically with an exchange strength at the surface that is either (i) proportional to the local surface concentration, or (ii) a constant. Both solutions are in the form of infinite series containing Bessel functions. Results from these calculations can be used to determine various thermodynamic properties of a solute in a homogeneous solid solution.
ISSN:0021-8979
DOI:10.1063/1.334833
出版商:AIP
年代:1985
数据来源: AIP
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73. |
Electrical characteristics of zinc oxide varistors subjected to hydrostatic pressure |
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Journal of Applied Physics,
Volume 57,
Issue 12,
1985,
Page 5535-5538
O. Dorlanne,
Bui Ai,
P. Destruel,
A. Loubie`re,
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摘要:
This paper presents the changes of electrical characteristics in zinc oxide varistors subjected to hydrostatic pressure up to 4 kbar. Electrical measurements have been carried out with pressurized samples. Beyond 1 kbar, the leakage current increases exponentially with pressure as described by the relationshipIF=P7,4. This leads to a decrease, by a factor of 2, of the nonlinear coefficient. In spite of choosing a different experimental approach and different material compounds, our results are in very good agreement with those already published.
ISSN:0021-8979
DOI:10.1063/1.334834
出版商:AIP
年代:1985
数据来源: AIP
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74. |
Annealing behavior of light‐induced defects in boron‐doped hydrogenated amorphous silicon alloys |
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Journal of Applied Physics,
Volume 57,
Issue 12,
1985,
Page 5539-5541
W. den Boer,
S. Guha,
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摘要:
Light‐induced effects in lightly boron‐doped hydrogenated amorphous silicon alloys have been studied in coplanar and sandwich sample configurations. It is observed that metastable changes in these films anneal out at a significantly lower temperature (≤ 100 °C) than in undoped films.
ISSN:0021-8979
DOI:10.1063/1.334835
出版商:AIP
年代:1985
数据来源: AIP
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75. |
The growth of CdS and Cd1−xZnxS |
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Journal of Applied Physics,
Volume 57,
Issue 12,
1985,
Page 5542-5543
H. Kuwamoto,
W. J. Gunning,
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摘要:
CdS and Cd1−xZnxS single crystals have been grown by a modified vapor growth technique. They have high transmission and high resistivity (>1010&OHgr; cm). The results of transmission measurements are reported.
ISSN:0021-8979
DOI:10.1063/1.334836
出版商:AIP
年代:1985
数据来源: AIP
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