摘要:

For nickel on the chemically clean surface of undoped semi‐insulating GaAs at room temperature, an upward surface band bending of 0.062 eV and a barrier height of 0.690 eV have been observed by the photovoltage and the internal photoemission techniques, respectively. The observed surface band bending is in excellent agreement with its predicted value, and the observed barrier height also agrees very well with its value from the very careful analysis of reversedI‐Vdata. It has been determined that the interfacial Fermi level lies at 0.690 eV below the GaAs conduction band minimum at the interface. The interfacial Fermi level is found to coincide with the energy level of the EL2 native defect, indicating the importance of the EL2 in the Fermi level pinning at the interface. ©1995 American Institute of Physics.

ISSN:0021-8979    

DOI:10.1063/1.359762

出版商:AIP    

年代:1995

数据来源: AIP

摘要:

We derive an elementary relation for the determination of the pseudo‐Brewster angle of metals as a function of frequency. The pseudo‐Brewster angle is defined as the angle where the reflection is minimal, i.e., the absorption is maximal. A comparison of the approximated values with the exact ones shows that the former are very accurate for photon energies below the Drude plasma frequency. Additionally we give two very simple expressions for a fast and surprisingly good estimate at low and high photon energies. ©1995 American Institute of Physics.

ISSN:0021-8979    

DOI:10.1063/1.359763

出版商:AIP    

年代:1995

数据来源: AIP

摘要:

The influence of thermal acoustic vibrations on impurity field ionization is investigated. At lattice temperaturesT<15 K, when tunneling from the ground level predominates, thermal acoustic phonons in silicon are found to enhance phosphorus field ionization. The experiments are compared with recent theoretical calculations, which take into account the deformation potential interaction of thermal acoustic phonons with a localized center. ©1995 American Institute of Physics.

ISSN:0021-8979    

DOI:10.1063/1.359764

出版商:AIP    

年代:1995

数据来源: AIP

摘要:

The influence of nonlinearities in the absorptivity, heat conductivity, and chemical kinetics on the spatial resolution of patterns thermally produced by a focused energy beam is studied theoretically. It is shown that a decrease in substrate temperature and proper choice of processing temperatures can significantly improve the resolution. Example calculations are presented for Si. ©1995 American Institute of Physics.

ISSN:0021-8979    

DOI:10.1063/1.359765

出版商:AIP    

年代:1995

数据来源: AIP

摘要:

We have studied the photoluminescence decay time in a series of high quality GaAs/AlGaAs double heterostructure samples, grown by liquid phase epitaxy, with differentp‐type doping. We have compared the experimentally observed decay time as a function of temperature from 100 to 700 K, with a complete calculation of the radiative recombination rate, including the temperature dependence of the reabsorption factor. We conclude that the observed decay time is well explained by a dominating radiative recombination up to temperatures of about 500 K. The internal quantum efficiency is hence close to unity. At higher temperatures we observe a deviation from the expected values for the radiative recombination, attributed to a nonradiative recombination channel. ©1995 American Institute of Physics.

ISSN:0021-8979    

DOI:10.1063/1.360740

出版商:AIP    

年代:1995

数据来源: AIP

摘要:

In the experimental study of amorphous silicon films by H. Kumomi and T. Yonehara [J. Appl. Phys.75, 2884 (1994)] the role of transient nucleation in formation of distribution of overcritical grains was emphasized. The corresponding analytical expression was previously obtained by V. Shneidman [Sov. Phys. Technol. Phys.32, 76 (1987);33, 1338 (1988)]. This solution is presented and its relation to the work of Kumomi and Yonehara is discussed. ©1995 American Institute of Physics.

ISSN:0021-8979    

DOI:10.1063/1.359766

出版商:AIP    

年代:1995

数据来源: AIP

ISSN:0021-8979    

DOI:10.1063/1.360785

出版商:AIP    

年代:1995

数据来源: AIP