|
71. |
Linear dose dependence of ion beam mixing of metals on Si |
|
Journal of Applied Physics,
Volume 57,
Issue 4,
1985,
Page 1414-1416
D. B. Poker,
B. R. Appleton,
Preview
|
PDF (190KB)
|
|
摘要:
Helium backscattering spectroscopy was used to measure ion beam mixing of Au, V, Cr, and Pd on Si after28Si implantation. The depths of mixing showed linear dose dependences, in contrast to the more commonly observed square‐root dependence. Possible reasons for this discrepancy with earlier results are discussed.
ISSN:0021-8979
DOI:10.1063/1.334501
出版商:AIP
年代:1985
数据来源: AIP
|
72. |
Anisotropic phonon scattering in &ggr;‐irradiated LiF |
|
Journal of Applied Physics,
Volume 57,
Issue 4,
1985,
Page 1417-1419
R. Soltis,
J. Trivisonno,
R. J. Hauenstein,
Preview
|
PDF (216KB)
|
|
摘要:
A heat‐pulse technique was used to study phonon scattering in &ggr;‐irradiated LiF as a function of polarization, input power, and propagation direction. The results provide direct experimental evidence of a strong, anisotropic, polarization‐dependent scattering by &ggr;‐induced defects with a frequency‐dependent absorption of transverse phonons for propagation in the [111] direction.
ISSN:0021-8979
DOI:10.1063/1.334502
出版商:AIP
年代:1985
数据来源: AIP
|
73. |
Excimer laser ablation and thermal coupling efficiency to polymer films |
|
Journal of Applied Physics,
Volume 57,
Issue 4,
1985,
Page 1420-1422
P. E. Dyer,
J. Sidhu,
Preview
|
PDF (238KB)
|
|
摘要:
Thermal coupling and etch rate measurements are reported for polyethylene terephthalate and polyimide films irradiated at excimer laser wavelengths of 193, 248, and 308 nm. Thermal energy balance is observed up to a threshold fluence but above this the energy absorbed remains approximately constant, the excess energy being carried away by the ablated material. The ablated material appears to have a temperature >103K as determined by calculations based on the thermal energy loading and relaxation time estimated from IR measurements. These results provided useful information on the interaction mechanism.
ISSN:0021-8979
DOI:10.1063/1.334503
出版商:AIP
年代:1985
数据来源: AIP
|
74. |
Nitrogen implantation of metals |
|
Journal of Applied Physics,
Volume 57,
Issue 4,
1985,
Page 1423-1425
A. Anttila,
J. Keinonen,
M. Uhrmacher,
S. Vahvaselka¨,
Preview
|
PDF (243KB)
|
|
摘要:
Sixteen metals implanted to saturation with 300‐keV N2+ions have been studied using nuclear resonance broadening and Rutherford backscattering techniques to profile the implanted concentration. Blisters due to the implanted nitrogen were observed in Mg, Al, Ti, V, Cr, Nb, Mo, Ta, W, and AISI 304 steel but not in Cu, Zr, Ag, Hf, and Au. The nominal saturation concentration at maximum varied from 50 to 60 at. % for all cases except for Cu, Ag, and Au, where it was 20 at. %. The surface hardness was generally increased by a factor between 1.2 and 2.3. However, no increase was observed for Mo, Ag, and Au. The mononitride formation in Ti, Zr, and Hf was verified by x‐ray diffraction. The formation of blisters and diffusion in the preparation of nitrides is discussed.
ISSN:0021-8979
DOI:10.1063/1.334504
出版商:AIP
年代:1985
数据来源: AIP
|
75. |
Correlation between chemistry and the amount of mixing in bilayers submitted to ion bombardment |
|
Journal of Applied Physics,
Volume 57,
Issue 4,
1985,
Page 1426-1429
F. d’Heurle,
J. E. E. Baglin,
G. J. Clark,
Preview
|
PDF (369KB)
|
|
摘要:
Experiments conducted with bilayers of elements so chosen as to maximize chemical differences and to minimize physical differences (e.g., atomic weights) demonstrate the importance of chemistry in determining the amount of interaction which results from ion mixing experiments. These results emphasize the dominance of chemical factors which are at least neglected, if not totally ignored, in the modeling of ion mixing effects. Ion bombardment of Pd/Hf bilayers causes the formation of Pd3Hf; the existence of such compounds was not detected in other bilayers of ‘‘similar’’ elements.
ISSN:0021-8979
DOI:10.1063/1.334505
出版商:AIP
年代:1985
数据来源: AIP
|
|