摘要:

The experimentally observed magnetically induced dynamics of the anodic arc region of an argon arc discharge are presented for Lorentz and retrograde motion. The same externally applied conditions were employed for both modes of motion. The anodic arc region proceeds in the Lorentz direction through the formation of anode arc spots on the Lorentz side of the arc discharge. During retrograde motion, a new anodic arc region is created on the retrograde side of the original anodic arc region by a discharge initiating between the anodic and cathodic arc regions. The separation of the positive column and the original anodic arc region during retrograde motion results in an anodic arc spot where the original anodic arc region existed.

ISSN:0021-8979    

DOI:10.1063/1.1663518

出版商:AIP    

年代:1974

数据来源: AIP

摘要:

The incomplete activation observed when high doses of boron (2×1015−2×1016ions/cm2) are implanted in silicon is characterized by a maximum concentration of electrically active boron that is independent of both the dose and anneal time and well below the solid solubility value. An Arrhenius plot for this concentration‐temperature dependence yields an activation energy of 0.31 eV. It is suggested that the incomplete activation is due to interactions between the implanted ions. Whether the defect structure is a simple B&sngbnd;B pair or a cluster involving residual damage is not clear at this time.

ISSN:0021-8979    

DOI:10.1063/1.1663519

出版商:AIP    

年代:1974

数据来源: AIP

摘要:

The energy stored in deformation of a steadily moving domain wall,Wd, is calculated. For a tape sample,Wdper unit area of wall is found to be more than twice the intrinsic energy per unit area of the undistorted wall, &sgr;w. This result raises the question of whether it is meaningful to speak of the wall energy density in a thin film when the stored energy may fluctuate drastically.

ISSN:0021-8979    

DOI:10.1063/1.1663520

出版商:AIP    

年代:1974

数据来源: AIP

摘要:

Thermal and electrical conductivities of 28 layers of 100‐Å‐thick and 6 layers of 500‐Å‐thick polycrystalline copper films, each individually sandwiched between 25‐Å‐thick amorphous Ge or SiO films, have been measured. The results show that, provided no interfacial alloying occurs (as is the case with SiO films), the effective values of the conductivities of the multilayer structure are very close to those of the individual (100 or 500 Å) copper films. This equivalence of the transport behavior enables the measurements of the thermal conductivity of ultrathin metal films. Further, it indicates no significant enhancement of diffuse scattering of electrons and phonons at the surfaces of the copper films due to the presence of multiple interfaces.

ISSN:0021-8979    

DOI:10.1063/1.1663521

出版商:AIP    

年代:1974

数据来源: AIP

摘要:

Acoustic wave second‐harmonic generation in materials with strain‐dependent dielectric constants is investigated in the presence of static electric and magnetic fields. It is shown that for such materials with large dielectric constants, the second‐harmonic yield is much larger in magnitude than in materials exhibiting piezoelectricity.

ISSN:0021-8979    

DOI:10.1063/1.1663522

出版商:AIP    

年代:1974

数据来源: AIP