摘要:

A new geometry DH laser is developed in which a very thin GaAs homojunction laser is sandwiched by (GaAl)As layers. The minimum threshold current is 63 and 80 mA for pulsed and cw operation at room temperature, respectively. The possibility of further reduction of threshold current is briefly mentioned.

ISSN:0021-8979    

DOI:10.1063/1.1663670

出版商:AIP    

年代:1974

数据来源: AIP

摘要:

The one‐carrier injection current‐voltage characteristics for insulators having two equal metal contacts and containing traps are computed, together with the free‐carrier zero‐bias spatial distributions, for extrinsic semiconductors. It is shown that the overlap of the contacts may give rise to trap‐filled‐limit characteristics governed by a power law. The steepness of these characteristics proves to be less than that predicted by Lampert and Edelman. The shallow‐trap square‐law characteristic may be entirely replaced by an overlap‐determined Ohm's law characteristic. The overlap sometimes fails to be removed through impurity conduction.

ISSN:0021-8979    

DOI:10.1063/1.1663671

出版商:AIP    

年代:1974

数据来源: AIP

摘要:

Thermomagnetic writing of small areas on MnBi thin films using an electron beam has been demonstrated both on unheated films and on films maintained at an elevated temperature during the writing procedure. Experiments in which the incident energy of the beam was varied have allowed a safe writing region to be established. Factors which influence the written spot diameter are discussed.

ISSN:0021-8979    

DOI:10.1063/1.1663672

出版商:AIP    

年代:1974

数据来源: AIP

摘要:

The Schottky barrier height for holes in hafnium (Hf)‐p‐type silicon junctions was determined to be 0.58±0.02 eV by current‐voltage, capacitance‐voltage, and photothreshold techniques. The barrier height determined here does not agree with the earlier reported value of 0.90 eV by Saxena. We have shown that interface effects can account for only minor changes—viz., 0.02 eV in our barrier height value. The reasons for the discrepancy with Saxena's value are not fully understood, but our results are consistent with those expected from conventional Schottky barrier models.

ISSN:0021-8979    

DOI:10.1063/1.1663673

出版商:AIP    

年代:1974

数据来源: AIP

摘要:

As a comment on a recent paper by Steele, a more general uniqueness theorem for time‐independent fields is mentioned.

ISSN:0021-8979    

DOI:10.1063/1.1663674

出版商:AIP    

年代:1974

数据来源: AIP

摘要:

Some comments on the evaluation of the Gru¨neisen parameter from a log(Debye temperature)‐vs‐log(atomic volume) plot are presented. The values of the Gru¨neisen constant of group V and group VI elements obtained from this plot are 1.57 and 0.8, respectively.

ISSN:0021-8979    

DOI:10.1063/1.1663675

出版商:AIP    

年代:1974

数据来源: AIP

摘要:

The most popular model for a field emission diode has been a spherical cathode inside a concentric spherical anode. A much more accurate model assumes the cathode is an equipotential of a sphere centered on the tip of a narrow cone. The authors have discussed this latter model in some detail. The purpose of this paper is to point out similarities between the sphere and the sphere‐on‐cone models and to correct errors in our previous paper. The similarities discussed here make earlier results more useful in concept and practice. In particular, the sphere‐on‐cone model predicts a source size from 1.5 to 2.6 times larger than predicted by the simple sphere model that is normally used.

ISSN:0021-8979    

DOI:10.1063/1.1663676

出版商:AIP    

年代:1974

数据来源: AIP

摘要:

When light is diffracted by a sound wave, the frequencies of the diffracted waves are shifted from the incident frequency by an integral multiple of the acoustic frequency. These frequency shifts are interpreted as a relativistic Doppler effect due to the motion of the acoustic wavefronts, which act as the source of the diffracted waves.

ISSN:0021-8979    

DOI:10.1063/1.1663677

出版商:AIP    

年代:1974

数据来源: AIP

摘要:

A technique for measuring the overlaps of the gate electrodes of field‐effect structures is described. Ion‐implanted self‐aligned gate FET structures were used to evaluate the lateral spread of low‐energy (RP<0.1 &mgr;m) high‐dosage (5×1015/cm2) phosphorus and boron implantations and was found to be less than 10−5cm. Sheet resistance of the implanted region can also be evaluated by this technique. Some series resistance effects associated with inadequate annealing as well as two‐dimensional field aspects on the threshold voltage associated with short channel devices in this experiment were observed.

ISSN:0021-8979    

DOI:10.1063/1.1663678

出版商:AIP    

年代:1974

数据来源: AIP

摘要:

The flow stress of a series of KBr&sngbnd;KCl mixed crystals has been measured as a function of radiation damage. The magnitude of the increase in flow stress is approximately the same as it is for pure KCl or KBr for equivalent amounts of damage. This result shows that the radiation hardening and alloy hardening are additive. The data have also been used to indicate the size and shape of the interstitial clusters in these mixed crystals.

ISSN:0021-8979    

DOI:10.1063/1.1663679

出版商:AIP    

年代:1974

数据来源: AIP