摘要:

Ohmic contacts ton‐type GaAs have been developed using epitaxial Ge films on GaAs alloyed with Ni overlayers by solid‐state diffusion at temperatures of 450–550 °C. The contacts are smooth and continuous, showing no evidence of phase separation or other surface structure. Interdiffusion at the Ge‐GaAs and Ni/Ge‐GaAs interfaces was examined by Auger electron spectroscopy (AES) sputter profiling techniques. An abrupt profile is observed at both the as‐deposited and sintered Ge‐GaAs interface. With the presence of a Ni overlayer, significant interdiffusion between Ge and GaAs is revealed by AES profiles. These results, together with the current‐voltage (I‐V) characteristics of similar contacts prepared onp‐type GaAs, indicate the presence of a Ge‐dopedn+layer at the Ni/Ge‐GaAs interface.

ISSN:0021-8979    

DOI:10.1063/1.325150

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

Polyvinylchloride‐copper composites at different volume percent of copper are annealed at 50 °C for 10 days. The effect of temperature on the electrical resistivity of the resulting composites is studied between 0 and 40 °C using a four‐electrode device. Three clearly distinguished behaviors of the composites are observed after prolonged annealing. They exhibit (a) a positive temperature coefficient of resistance, (b) higher discrepancy in resistivity values for all metal loadings, and (c) an Ohmic current‐voltage relationship. We try to explain the positive temperature coefficient of resistance through the reduction of the contact pressure between the metal particles with increase in temperature.

ISSN:0021-8979    

DOI:10.1063/1.325151

出版商:AIP    

年代:1978

数据来源: AIP

ISSN:0021-8979    

DOI:10.1063/1.325564

出版商:AIP    

年代:1978

数据来源: AIP