摘要:

Ti vapor is produced in a He buffer gas. Ti metal is irradiated by a pulsed YAG laser, and its vapor is optically pumped by a N2laser at 337 nm. Laser lines at 551.4, 472.3, and 471.0 nm from the Ti3D01level which is connected to the ground state by the 337‐nm resonance line. Laser lines are reported for the first time at 551.5, 551.3, 431.5, and 547.4 nm from the3D02,3D03, or3G05levels which are not optically connected to the ground state by the 337 nm line. The laser transitions from the3D02,3D03, or3G05levels are observed only in a He‐Ti mixture.

ISSN:0021-8979    

DOI:10.1063/1.347038

出版商:AIP    

年代:1990

数据来源: AIP

摘要:

This communication describes a novel double‐grating test structure which enables grating pitch‐difference determination with angstrom accuracy. Edge acuity can also be estimated. The test structure is easily fabricated and rapidly evaluated with inexpensive equipment generally found in microstructure laboratories.

ISSN:0021-8979    

DOI:10.1063/1.347039

出版商:AIP    

年代:1990

数据来源: AIP

摘要:

Reactive ion etching of zinc‐doped InP has been assessed in terms of the degree and extent of the passivation (reduction in carrier concentration). It is found that passivation of acceptors depends on the rf power as well as etching times used. Reduction in carrier concentration as large as three orders of magnitude can be achieved by the use of powers as low as 0.5 W/cm2for 10 min. The effect of this passivation on the characteristics of semiconductor lasers is reported.

ISSN:0021-8979    

DOI:10.1063/1.347017

出版商:AIP    

年代:1990

数据来源: AIP

摘要:

About 85% of Ga implanted into As doped Si, about 80% of that into Sb doped Si, and about 78% of that into P doped Si were lost into atmosphere during annealing at 950 °C for 30 min. The number lost depended on impurities in native oxide films on the Si surfaces.

ISSN:0021-8979    

DOI:10.1063/1.347018

出版商:AIP    

年代:1990

数据来源: AIP

摘要:

We report the phototransmission measurement of strained‐layer InxGa1−xAs/GaAs single quantum well structures at room temperature. The spectra obtained show distinct features of excitons in the single quantum wells. Fitting of the phototransmission spectrum indicates that the excitonic transition energy modulation is the main mechanism. The phototransmission can be used as a supplement to photoreflectance due to its sensitivity and convenience.

ISSN:0021-8979    

DOI:10.1063/1.347019

出版商:AIP    

年代:1990

数据来源: AIP

ISSN:0021-8979    

DOI:10.1063/1.347199

出版商:AIP    

年代:1990

数据来源: AIP