71. |
Inductance bridge for current‐quantum‐phase measurements in superconductors at zero frequency |
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Journal of Applied Physics,
Volume 45,
Issue 10,
1974,
Page 4601-4610
R. Meservey,
D. Paraskevopoulos,
L. W. Gruenberg,
P. M. Tedrow,
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摘要:
A zero‐frequency bridge has been developed for measuring the inductance and the current‐vs‐quantum‐phase relation of superconductors. The current null detector is a SQUID magnetometer coupled to the bridge by a superconducting transformer. The bridge is balanced by adjusting precision resistors at room temperature. The theory of the bridge and analysis of the null‐detector circuit for optimizing the sensitivity are given. For current‐dependent inductors, a definition of inductance based on the quantum‐phase difference is shown to be useful. Construction and operation of the bridge are described and measurements of inductance vs temperature for Al thin‐film meander lines are presented. Zero‐frequency measurements avoid the stray coupling to capacitances and normal metal inductances found in high‐frequency measurements and the method could give high‐precision absolute measurements. The sensitivity of the present instrument is such that an inductor of 4×10−7H was measured to a relative precision of one part in 104with a measuring current of 5×10−6A. Considerable improvement is possible, especially for circuit elements of very small inductance such as Josephson junctions and weak‐link superconductors.
ISSN:0021-8979
DOI:10.1063/1.1663097
出版商:AIP
年代:1974
数据来源: AIP
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72. |
The effect of cladding material on ac losses of commercial Nb3Sn tapes |
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Journal of Applied Physics,
Volume 45,
Issue 10,
1974,
Page 4611-4616
J. F. Bussie`re,
M. Garber,
M. Suenaga,
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摘要:
ac losses of commercial Nb3Sn tapes have been measured before and after removal of the normal metal cladding which is used to stabilize the superconductor. It is shown that materials which are frequently used to assist in bonding the normal metal to the Nb3Sn surface give rise to hysteretic losses which are much larger than those of the Nb3Sn itself in the low‐field region of interest for power transmission, below 1000 Oe. Examples of such materials are superconductive Pb&sngbnd;Sn solders used in cladding tin‐diffused tapes and ferromagnetic nickel flashes used in silver plating vapor‐deposited tapes. These lossy materials are not essential and can be eliminated in tapes which are properly designed for power transmission. It is also shown that eddy current losses are acceptably small for normal metal cladding thickness of the order of 25 &mgr;m (&rgr;∼10−8&OHgr; cm).
ISSN:0021-8979
DOI:10.1063/1.1663098
出版商:AIP
年代:1974
数据来源: AIP
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73. |
Technique for fabrication of superconducting microbridges and small Josephson tunnel junctions |
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Journal of Applied Physics,
Volume 45,
Issue 10,
1974,
Page 4617-4621
J. T. C. Yeh,
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摘要:
A simple, versatile, and inexpensive technique for the fabrication of superconducting microbridges and small Josephson tunnel junctions is described. The technique is based on the use of fiber masks for the production of precisely controlled substrate channels and yields device dimensions of 1 &mgr;m or less.
ISSN:0021-8979
DOI:10.1063/1.1663099
出版商:AIP
年代:1974
数据来源: AIP
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74. |
Magnetic‐field‐induced recrystallization in MnBi |
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Journal of Applied Physics,
Volume 45,
Issue 10,
1974,
Page 4622-4625
Tu Chen,
W. E. Stutius,
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摘要:
A magnetic annealing effect has been observed in a ferromagnetic MnBi single crystal. It was found that by heating an MnBi single crystal in a magnetic field perpendicular to the easy axis of magnetization of the crystal, the easy axis of the magnetization and the hexagonalcaxis of the crystal would change into the direction parallel to the field through a recrystallization process induced by the magnetic annealing. This recrystallization phenomenon is similar to that observed by Boothbyet al.on a polycrystalline sample. Based on the microstructure investigation and transformation kinetic analysis, it was found that the mechanism of the recrystallization in a single crystal is a thermally activated nucleation and interface controlled growth process. It was established that the magnetocrystalline anisotropy energy of the crystal is responsible for the recrystallization.
ISSN:0021-8979
DOI:10.1063/1.1663100
出版商:AIP
年代:1974
数据来源: AIP
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75. |
Higher‐order models for static magnetization in thin films |
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Journal of Applied Physics,
Volume 45,
Issue 10,
1974,
Page 4626-4630
R. E. Dodd,
L. K. Wilson,
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摘要:
The theoretical field positions of the standing spin‐wave modes for selected Permalloy films and YIG films were obtained from a numerical solution of the spin‐wave equation for the case of perpendicular resonance for different pinning conditions. The static magnetizationM(z)was assumed to have an asymmetrical variation in which the magnetization has a minimum value at the substrate‐film interface (z=0) and increases to a maximum value at the film‐air interface (z=L). Comparisons of theoretical and experimental field positions show that a good fit of the experimental data occurs when the magnetization has a polynomial‐type variation.
ISSN:0021-8979
DOI:10.1063/1.1663101
出版商:AIP
年代:1974
数据来源: AIP
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76. |
Laser drilling mechanics |
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Journal of Applied Physics,
Volume 45,
Issue 10,
1974,
Page 4631-4637
R. E. Wagner,
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摘要:
Many laser drilling applications require that the shape of the drilled hole be carefully controlled. In order to successfully do this it is necessary to understand the laser drilling process. This paper reports on a quantitative model which predicts the depth and shape of a hole drilled in alumina ceramic by a ruby laser. Both experimental and theoretical results indicate that the predominant drilling mechanism for this application is not one of surface absorption and conduction inward, but one in which laser energy is absorbed throughout the bulk of the ceramic. The depth and shape of holes drilled in ceramic have been accurately predicted from the measured beam energy density distribution. Finally, it is shown that the radiation pressure of the focused beam plays an important role in the romoval of molten material from the heated region.
ISSN:0021-8979
DOI:10.1063/1.1663102
出版商:AIP
年代:1974
数据来源: AIP
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77. |
Sensitivity and detective quantum efficiency of electron microscope plates at high voltages |
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Journal of Applied Physics,
Volume 45,
Issue 10,
1974,
Page 4638-4643
D. G. Ast,
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摘要:
The voltage dependence of the electron sensitivity of photographic emulsions is analyzed in terms of experimentally established relations between (i) track density and energy loss rate (ii) incident energy and range. It is found that the latter strongly dominates the functional sensitivity at high energies. Calculated values are compared with experimental data by Dudley. The detective quantum efficiency of standard electron microscope plates is computed as a function of energy.
ISSN:0021-8979
DOI:10.1063/1.1663103
出版商:AIP
年代:1974
数据来源: AIP
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78. |
Specific heat of 2H NbSe2 |
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Journal of Applied Physics,
Volume 45,
Issue 10,
1974,
Page 4644-4648
Albert J. Bevolo,
H. R. Shanks,
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摘要:
The specific heats of four samples of 2H NbSe2have been measured in the temperature range from 1 to 54 K. No anomalous behavior was found near 40 K where x‐ray, NMR, and Hall‐effect measurements have indicated the presence of a phase transition. An upper limit of 0.3 J/mole K has been placed on the magnitude of any anomaly in the heat capacity associated with this transition. Measurements of high‐purity stoichiometric 2H NbSe2sample gave a superconducting transition temperature of 7.23 K, a specific heat jump (&Dgr;C) in zero field of 240 mJ/mole K, and a Debye temperature of 204 K. A deviation from the usualT3behavior for the lattice contribution to the heat capacity was observed and assumed to be due to the two‐dimensional layer structure of the compound. Our best estimate for the electronic coefficient of specific heat (&ggr;) is about 10±5 mJ/mole K2. Based on the values forTcand &Dgr;C, the value for &ggr; calculated from BCS theory is 23 mJ/mole K2for 2H NbSe2which is in disagreement with our estimated value for &ggr; by a factor of 2.
ISSN:0021-8979
DOI:10.1063/1.1663104
出版商:AIP
年代:1974
数据来源: AIP
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79. |
Application of spall phenomena to gun explosion problem |
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Journal of Applied Physics,
Volume 45,
Issue 10,
1974,
Page 4649-4651
J. V. Foltz,
F. I. Grace,
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摘要:
The authors apply knowledge of spall phenomena and a simple pressure wave propagation model as a tool in solving gun explosion problems. An example with an explosive‐loaded cylinder serves to illustrate the approach.
ISSN:0021-8979
DOI:10.1063/1.1663105
出版商:AIP
年代:1974
数据来源: AIP
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80. |
On the origin of the increase in Schottky barrier height with interfacial oxide thickness |
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Journal of Applied Physics,
Volume 45,
Issue 10,
1974,
Page 4652-4652
Martin Peckerar,
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摘要:
Two recent papers have dealt with the observation that the Schottky barrier height,Vb′, of the gold‐gallium arsenide system increases linearly with the thickness of an interfacial oxide layer,l. In this paper it is shown how this linear relationship can be derived by considering the cause to be the same as that of the flat‐band voltage shift in MOS devices. That is, charge trapped at the oxide‐semiconductor interface creates an image charge in the semiconductor bulk. The slope,dVB′/dl, predicted by this analysis is in good agreement with the 1.75×10−6V/cm value experimentally derived. The predicted barrier height also varies linearly with the amount of trapped surface charge,Qss.
ISSN:0021-8979
DOI:10.1063/1.1663106
出版商:AIP
年代:1974
数据来源: AIP
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