摘要:

Strength effects confuse equation‐of‐state data obtained by shock waves. In order to take these effects properly into account in the high‐pressure regime, reduction from uniaxial‐strain experimental shock loci to a mean‐stress curve and from the mean‐stress curve to the ’’fluid Hugoniot’’ curve are derived. Applications to aluminum and copper are given.

ISSN:0021-8979    

DOI:10.1063/1.327697

出版商:AIP    

年代:1980

数据来源: AIP

摘要:

A comparison is made between two recently obtained independent sets of contact charge exchange data taken by Cottrell, Lowell and Rose‐Innes, and by Fabish and Duke, respectively. Discrepancies between the two sets of data are ascribed to the utilization of different polymer preparation and processing procedures. Both sets of data are consistent with the model of contact charge exchange via localized states in the polymer proposed by Duke and Fabish. The origin of the localized electronic states in the polymers is different in the two data sets, however, because the polymer processing introduces extrinsic states in one case but not the other.

ISSN:0021-8979    

DOI:10.1063/1.327655

出版商:AIP    

年代:1980

数据来源: AIP

摘要:

A reply to the points raised in the previous communication confirming our contention that the true final charge transferred to a given area on an insulator after contact to a series of metals depends only on the last metal to contact that area.

ISSN:0021-8979    

DOI:10.1063/1.327698

出版商:AIP    

年代:1980

数据来源: AIP

摘要:

The erroneous assumption that for an insulating crystal the electrical displacement field (?) is zero in the absence of an applied electrical field has led to wrong values for the line charges associated with dislocations as well as for the electric fields and core charges associated with point defects in III‐V crystals. The values for the charge distribution associated with these two types of defects are, however, not affected.

ISSN:0021-8979    

DOI:10.1063/1.327699

出版商:AIP    

年代:1980

数据来源: AIP

摘要:

It is demonstrated both theoretically and experimentally that the one‐dimensional theories of the photoacoustic effect in solids are still applicable when the heat flow is three dimensional, provided that the thermal diffusion length in the gas is much less than the radius of the sample chamber.

ISSN:0021-8979    

DOI:10.1063/1.327700

出版商:AIP    

年代:1980

数据来源: AIP

摘要:

Experimental evidence is presented to support the suggestion by Gugeletal. that the low work function of the Ag‐O‐Cs photocathode may be attributed to small amounts of cesium peroxide (Cs2O2) which form a donor level close to the conduction band of the semiconductor Cs2O.

ISSN:0021-8979    

DOI:10.1063/1.327701

出版商:AIP    

年代:1980

数据来源: AIP

摘要:

An analytical model is presented for solid‐phase reactions induced by a scanning cw laser. The results are applicable for both rate‐limited reactions, such as the regrowth of implanted amorphous Si, and diffusion‐limited reactions, such as the formation of metal silicides. The effect of the laser is interpreted in terms of a furnace anneal at an ’’effective temperature,’’Teff, for an ’’effective time,’’teff.Teffis shown to be equal to the maximum laser‐induced surface temperature, whileteffequals the laser dwell time multiplied by a ’’dwell‐time reduction factor’’ which is a rational function of several material and annealing parameters and is typically on the order of(1)/(3) . A comparison of theory and experiment is made for the specific case of the formation of Pd2Si.

ISSN:0021-8979    

DOI:10.1063/1.327702

出版商:AIP    

年代:1980

数据来源: AIP

摘要:

An elastic recoil detection technique has been developed to depth profile light isotopes (A≲35) in low‐atomic‐mass solids (A≲16). It utilizes the maximum‐scattering‐angle property rather than an absorber to reduce background, with resultant depth precision of about ±2 &mgr;g/cm2(100 A˚). The sensitivity is ?5×1016atoms/cm2for isotopes lighter than the substrate and ?1015atoms/cm2for heavier ones.

ISSN:0021-8979    

DOI:10.1063/1.327703

出版商:AIP    

年代:1980

数据来源: AIP

摘要:

The low‐current I‐V characteristics of AlxGa1−xAs‐GaAs DH laser diodes have been investigated. The variation of the ideality factor is explained by taking into account the interaction of the thermionic‐field emission and interface charge. Both theoretical calculations and experimental data are presented here to show the validity of our model.

ISSN:0021-8979    

DOI:10.1063/1.327704

出版商:AIP    

年代:1980

数据来源: AIP