摘要:

Townsend has considered the problem of double‐force defects distributed uniformly throughout elastically isotropicspheresand has achieved separation of the image displacements from those displacements which would occur in an infinite medium. Here it is shown how a similar separation of the total displacement into the two contributions can be achieved for the case of elastically isotropicellipsoidscontaining double‐force defects. Townsend’s result is derived as a special case.

ISSN:0021-8979    

DOI:10.1063/1.324541

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

The absorption of laser light was calculated at a number of laser frequencies and intensities in order to determine the effect of using different strong‐field expressions for the inverse bremsstrahlung absorption. These results are compared to those from experiments on LiD targets, and it is shown that the strong‐field formulation of Shima and Yatom gives results which are closer to the experimental points than either the weak‐field expression or an approximation due to Goldman.

ISSN:0021-8979    

DOI:10.1063/1.324542

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

It is shown how the frequency range for total reflection at the interface between free space and plasma is modified by their relative motion.

ISSN:0021-8979    

DOI:10.1063/1.324543

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

The reliability of fused KOH for revealing dislocations in the (1¯012) rhombohedral plane in Czochralski‐grown sapphire single crystals was investigated by using x‐ray‐transmission topography. It was found that the etch pits represent closely the dislocations in the (1¯012) sapphire, although a one‐to‐one correspondence was not established.

ISSN:0021-8979    

DOI:10.1063/1.324544

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

An experimental technique is discussed for measuring the mass‐velocity distribution of material ejected from strongly shocked surfaces. The two major advantages of this technique are, first, that it is useful for measuring large amounts of surface ejecta and, second, that it allows a direct determination of the mass‐velocity distribution of ejecta, without the need for differentiating experimental data. The method has been applied to a measurement of surface ejecta from shock‐loaded porous tungsten.

ISSN:0021-8979    

DOI:10.1063/1.324545

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

Reactive sputtering of targets of certain noble (Au, Pt) and oxidizable metals (Co, Sn) are studied by glow discharge mass spectrometry (GDMS) and by x‐ray diffraction. It is concluded that (1) oxidation of the target occurs for Sn and Co, (2) a plasma reaction occurs for every metal, especially Au, and (3) a chemical decomposition of AuO and an oxidation to higher states occurs on the substrate for Pt, Co, and Sn.

ISSN:0021-8979    

DOI:10.1063/1.324546

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

Combined measurements of the photoelectromagnetic effect and photoconductivity in three different geometries can be used to determine the anisotropy factors (&mgr;n∥/&mgr;n⊥, &mgr;p∥/&mgr;p∥) and the mobility ratios (&mgr;n∥/&mgr;p∥, &mgr;n⊥/&mgr;p⊥) in anisotropic semiconductors. In the present work this method has been applied to mercuric iodide; previous data on electron mobilities are confirmed, whereas the hole mobility is nearly isotropic.

ISSN:0021-8979    

DOI:10.1063/1.324547

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

Values for the electron minority‐carrier lifetime &tgr;nin Hg0.68Cd0.32Te photodiodes were independently determined by two indirect techniques. Measurements of the junction resistance under zero bias at 210 K yield &tgr;n=2.3×10−7sec, and diffusion length measurements give &tgr;n=2.9×10−7sec. These results are in agreement with our calculations for radiative lifetime inp‐type Hg0.68Cd0.32Te. Similar measurements on gold‐doped material indicate a lifetime shorter by almost three orders of magnitude, and it is suggested that this is due to recombination associated with Shockley‐Read centers.

ISSN:0021-8979    

DOI:10.1063/1.324548

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

The effect of gold recombination centers on the trapping state at the silicon/silicon‐oxide interface has been studied. The technique involves applying a linear voltage ramp to the device and measuring the resultingI‐Vcharacteristic. It is found that at low temperatures (∼230 °K) the technique resolves pronounced structure in the interfacial trap distribution that is not apparent at room temperature. Pronounced peaks in the distribution are reported occurring atEV+0.4 andEV+0.6 eV.

ISSN:0021-8979    

DOI:10.1063/1.324549

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

Photoluminescence measurements on Si‐doped GaAs single crystals heat treated in vacuum at 400≲T≲800 °C reveal emission peaks at 1.363, 1.409, and 1.487 eV, which correspond to three acceptor levels introduced through the activation of vacancies and the site transfer of Si atoms during the annealing process.

ISSN:0021-8979    

DOI:10.1063/1.324550

出版商:AIP    

年代:1978

数据来源: AIP