摘要:

A new AlGaAs layer was formed on GaAs substrates by Zn implantation into an Al0.4Ga0.6As single heterointerface. The Zn implantation of 1015cm−2doses at 200 keV with subsequent annealing at 500 °C for 15 min formed the AlxGa1−xAs layer (x<0.4) graded compositionally to the depth with the thickness of about 300 A˚. AlGaAs fine patterns of 2–10 &mgr;m wide were formed on GaAs substrates by Zn implantation and with low‐temperature, short‐time annealing.

ISSN:0021-8979    

DOI:10.1063/1.332151

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

Finite deformations have a stress (&sgr;)–strain (&egr;) relation of the form &egr;=s′11&sgr; +&dgr;(s11&sgr;)2, wheres′11is an elastic compliance and &dgr; is a combination of second‐order and third‐order elastic constants. Tensile tests performed on bismuth whisker crystals oriented in the ⟨111¯⟩ and ⟨11¯0⟩ directions give &dgr;111¯=7.6±0.5 and &dgr;11¯0=0±0.3, respectively. Orientations are given in the rhombohedral system in which the angle between axes is approximately 57°.

ISSN:0021-8979    

DOI:10.1063/1.332152

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

Intrinsic carrier concentration in Hg1−xCdxTe is calculated as a function of temperature and composition using the Kane nonparabolic approximation for band structure and recent measurements of the heavy hole massmhand energy gapEg. An expression fitted to these calculations is:ni[5.585−3.820x+1.753(10−3)T−1.364(10−3)xT] ×(1014)E3/4gT3/2exp(−Eg/2kbT). The fit of this approximation is within 1% of the calculatednifor the rangeEg>0, 50<T<300 K andx<0.7. It is also within 15% of experimentalniobtained from Hall measurements.

ISSN:0021-8979    

DOI:10.1063/1.332153

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

Localized deposition of thin films of W and Fe in both spot and line geometries has been demonstrated by laser chemical vapor deposition using a CO2laser and several different gaseous reactants. Although optical self‐limiting of the deposit thickness was observed under some irradiation conditions, films several thousand A˚ thick could be deposited with good physical properties. Radial dimensions were less than or equal to the laser beam diameter (D1/e2=600 &mgr;m).

ISSN:0021-8979    

DOI:10.1063/1.332154

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

The multiflash exposure method, which is a new useful and powerful tool for studying the nature of the photolytic silver atom on silver halide grain surface, is reported. The lifetime of the photolytic silver atom and the corresponding activation energy are easily and quantitatively determined by this method. The lifetime at 20 °C and the apparent activation energy were 1.1 s and 0.7 eV, respectively, on (100) surface of a chemically unsensitized silver bromide grain in a wet air environment. In a vacuum environment the lifetime was prolonged to 300 s and the activation energy was decreased to 0.40 eV.

ISSN:0021-8979    

DOI:10.1063/1.332155

出版商:AIP    

年代:1983

数据来源: AIP