摘要:

We examine how the spatial extent of the most probable potential well influences the form of the distribution of electronic states in disordered semiconductors. We show that, over most of the relevant energy spectrum, the spatial extent of this well does not vary greatly. A simple model, in which all potential wells are taken to be of the same spatial scale, is demonstrated to have the same physical content as a model in which variations of the spatial scale of the most probable potential well are taken into account. ©1997 American Institute of Physics.

ISSN:0021-8979    

DOI:10.1063/1.365684

出版商:AIP    

年代:1997

数据来源: AIP

摘要:

We have carried out modeling of the evolution of silicon solar cell performance following irradiation with high energy protons and electrons. Using the traditional semiempirical expression the solar cell output parameters ofa given cell structurecould be predicted for various particle energies by expressing the particle fluence as a displacement damage dose. We discuss the extent to which the evolution ofdifferent silicon solar cell structuresin a radiation environment can be predicted using the software package PC-1D by taking account of the degradation of the minority carrier lifetime and majority carrier concentration in the cell. ©1997 American Institute of Physics.

ISSN:0021-8979    

DOI:10.1063/1.365685

出版商:AIP    

年代:1997

数据来源: AIP

摘要:

We have performed high pressure photoluminescence studies of the deep emission band in GaInP/GaAs quantum well. Our results suggest that this peak is related to donor-acceptor pair transitions in the GaAs well. ©1997 American Institute of Physics.

ISSN:0021-8979    

DOI:10.1063/1.365686

出版商:AIP    

年代:1997

数据来源: AIP