摘要:

Recently, the process of metallization in an electron‐beam evaporator has been shown to result in a buildup of trapped positive charge at the silicon‐sapphire interface during the fabrication of silicon‐on‐sapphire devices. This charge buildup can be attributed to radiation damage produced by x rays generated by electron impact on the aluminum to be evaporated. This paper gives the results of calculations of the radiation dose in the sapphire near the silicon‐sapphire interface due to the electron‐beam‐metallization process.

ISSN:0021-8979    

DOI:10.1063/1.325075

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

The photoelastic constants of Ge have been measured at 3.39 and at 10.6 &mgr;m. Our stress‐birefringence data join smoothly to earlier stress‐birefringence data at other wavelengths. The acousto‐optic figure of meritM2, computed from our data, agrees well withM2determined for commercial acousto‐optic devices. However, our data disagree with some earlier measurements ofM2, the elasto‐optic constantspij, and the change of refractive index with hydrostatic pressuredn/dP.

ISSN:0021-8979    

DOI:10.1063/1.325076

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

Photoemission to 1.65 &mgr;m has been achieved in the reflection mode from a bias‐assistedp‐InGaAs cathode. Quantum yield at 1.55 &mgr;m is ∼10−3at 125 K and ∼10−4at 300 K.

ISSN:0021-8979    

DOI:10.1063/1.325077

出版商:AIP    

年代:1978

数据来源: AIP