摘要:

Epitaxial Tl2Ba2CaCu2O8superconducting films have been successfully grown on the dielectric Sr2(AlTa)O6(SAT) buffer layers. X‐ray diffraction data showed that the films were highlyc‐axis oriented with a rocking curve full width half maximum as narrow as 0.3°. The films also had an excellent in‐plane epitaxy with Tl2Ba2CaCu2O8[100] aligned with SAT[100] and MgO[100] of the substrate. The zero resistance temperatureTcof the superconducting films ranged from 95 to 103 K and the transport critical current densityJcin zero field was 3×105A/cm2at 77 K. ©1995 American Institute of Physics.

ISSN:0021-8979    

DOI:10.1063/1.360446

出版商:AIP    

年代:1995

数据来源: AIP

摘要:

The dc‐plasma assisted chemical vapor deposition method has been used to synthesize diamond films. Thermal diffusivity of these films has been measured in 120–800 K with a modified Angstrom method. Phonon scattering processes are considered to analyze thermal conductivity with the full Callaway model. In analysis, microstructure of grain boundaries and extended defect concentration give significant effects to the mean free path of phonons in low temperatures. At high temperatures, the thermal conductivity is governed by the intrinsic thermal resistive process, the umkalpp process. Thermal conductivity of the films above 500 K is shown to close to a recent measurement of natural diamond. This supports that the crystal structure of the films is not different with the bulk diamond. ©1995 American Institute of Physics.

ISSN:0021-8979    

DOI:10.1063/1.360447

出版商:AIP    

年代:1995

数据来源: AIP

摘要:

The effect of the low energy (30 eV) Ar plasma on the property of the deposited ultra thin a‐SiOX:H (0≤X≤2) films is investigated by alternate deposition and post‐deposition Ar plasma treatment processes in a rf hollow oval magnetron system using aninsituellipsometer and infrared absorption spectroscopy. The results show that the low energy Ar plasma bombardment has no effect on the stoichiometric oxide film but is able to cause hydrogen bond breaking and desorption, and reduce the thickness of the hydrogenated thin film. ©1995 American Institute of Physics.

ISSN:0021-8979    

DOI:10.1063/1.360448

出版商:AIP    

年代:1995

数据来源: AIP

摘要:

Temperature dependence of the resistivity, carrier concentration, and carrier mobility have been investigated in vacuum deposited Ag2Se thin layers. Properties of silver selenide layers developed by the reaction of poly‐ and monocrystalline parent Ag films and selenium on NaCl substrates in identical circumstances have been described and compared with one another. Experimental evidences of the hysteresis of the electrical properties due to the reversible first order transformation have been found during heating and cooling cycles. Irreversible changes of these properties in the semiconductor phase were detected. ©1995 American Institute of Physics.

ISSN:0021-8979    

DOI:10.1063/1.360449

出版商:AIP    

年代:1995

数据来源: AIP

摘要:

Electron‐stimulated desorption of positive and negative oxygen ions from YBa2Cu3O7surfaces has been studied as a function of electron kinetic energy in the 70–600 eV range. It has been found that the threshold electron kinetic energy needed to induce positive oxygen ion desorption occurs at 260±5 eV, whereas that associated with negative oxygen ion desorption was found to be 100±5 eV. These electron kinetic energies correspond to Cu, Y, and Ba core‐level binding energies. These results suggest that negative and positive oxygen ion desorption may be initiated via a primary core level ionization. ©1995 American Institute of Physics.

ISSN:0021-8979    

DOI:10.1063/1.360450

出版商:AIP    

年代:1995

数据来源: AIP

摘要:

The La0.6Pb0.4MnO3(LPMO) thin films wereinsitudeposited at different oxygen partial pressure and at a substrate temperature of 630 °C by pulsed laser deposition. The films grown at lower oxygen partial pressures showed an increase in lattice parameter and resistivity and a decrease in the insulator–metal transition temperature as compared to the stoichiometric LPMO thin film grown at 400 mTorr. Further, these oxygen‐deficient thin films showed over 70% giant magnetoresistance (GMR) near the insulator–metal transition temperature against the 40% GMR in the case of stoichiometric thin films. ©1995 American Institute of Physics.

ISSN:0021-8979    

DOI:10.1063/1.360727

出版商:AIP    

年代:1995

数据来源: AIP

摘要:

Measurements of time delay of several nanoseconds depending on the lasing wavelengths from 200‐&mgr;m‐diam single‐droplet dye laser are reported. The wavelength tuning is performed by injecting scattering particles into the droplet dye laser. It is suggested that the time delay depending on the lasing wavelengths by varying the quantity of the scatterers is related to the round‐trip time required to support lasing in the droplet. ©1995 American Institute of Physics.

ISSN:0021-8979    

DOI:10.1063/1.360451

出版商:AIP    

年代:1995

数据来源: AIP

摘要:

An error has been noted in the seminal work by Cape and Lehman [J. Appl. Phys.34, 926 (1963)] for determining thermal diffusivity values from the results of pulse heating experiments. In the present communication, the correct formula has been determined and some estimates have been made of the errors resulting from application of the incorrect formulation.

ISSN:0021-8979    

DOI:10.1063/1.360452

出版商:AIP    

年代:1995

数据来源: AIP

ISSN:0021-8979    

DOI:10.1063/1.360453

出版商:AIP    

年代:1995

数据来源: AIP

ISSN:0021-8979    

DOI:10.1063/1.360787

出版商:AIP    

年代:1995

数据来源: AIP