摘要:

A general method is given for constructing the ``point‐obstacle'' representation of the interaction between a dislocation and a physical obstacle. The equations of equilibrium are derived. The elastic interaction of a simple dislocation with a row of equispaced solute atoms which behave as repulsive barriers is treated as an illustration.

ISSN:0021-8979    

DOI:10.1063/1.1663351

出版商:AIP    

年代:1974

数据来源: AIP

摘要:

A simple model based on the concept of ionic clustering at the oxide‐semiconductor interface of an MOS device can qualitatively account for the observed slope change in the capacitance versus voltage characteristic of irradiated MOS capacitors.

ISSN:0021-8979    

DOI:10.1063/1.1663352

出版商:AIP    

年代:1974

数据来源: AIP

摘要:

Vacuum evaporation has been employed to obtain reproducible (invariable) epitaxial growth over wide ranges of substrate temperature in the cases of 15 combinations of group II‐VI compounds with various substrate surfaces. In all these cases only one basic structure was found in the films. Reproducible epitaxy could not be obtained in the case of ZnSe on (111) Ge. It is suggested that Aung San's variable structures represent scatter arising from growth conditions that do not result in reproducible epitaxial growth. It is pointed out that the interpretations suggested by Aung San for the electron diffraction patterns that he published in two cases do not correspond to his observation, and in the third case, it is not the only interpretation that is consistent with the diffraction pattern. Tilting and dark‐field microscopy experiments are necessary to identify these film structures.

ISSN:0021-8979    

DOI:10.1063/1.1663353

出版商:AIP    

年代:1974

数据来源: AIP

摘要:

This reply is to establish that the data and the interpretation of the results of the paper commented upon are reliable. Practical details of the crucial factors that influenced the repeatable growth of epitaxial ZnSe on a (111) Ge are given.

ISSN:0021-8979    

DOI:10.1063/1.1663354

出版商:AIP    

年代:1974

数据来源: AIP

摘要:

The fine‐grained structures produced in KCl crystals by press forging and rolling at elevated temperatures have been shown to be unstable at room temperature; large grains appear in the structures and grow at the expense of the fine‐grained matrix. Some observations pertaining to the grain morphology, boundary migration rate, and suppression of the phenomenon are presented.

ISSN:0021-8979    

DOI:10.1063/1.1663355

出版商:AIP    

年代:1974

数据来源: AIP

摘要:

Experimental results on the dependence of the Au&sngbnd;GaAs barrier height on the thicknessdof the oxide film reported by Pruniaux and Adams indicate that &PHgr;B=&PHgr;i+Ad. This communication shows that neglecting the effect of surface states in the Cowley‐Sze model predicts a linear decrease of barrier height with increasing oxide thickness. The observed increase of barrier height with increasing oxide thickness may be partly due to surface states at the oxide‐semiconductor interface. A model that includes the effects of surface states and of screening on the metal side is proposed to explain the various values for &PHgr;i.

ISSN:0021-8979    

DOI:10.1063/1.1663356

出版商:AIP    

年代:1974

数据来源: AIP

摘要:

PbTe&sngbnd;Gep‐nheterojunctions were formed by evaporating PbTe layers on Ge substrates kept at constant temperature. The electrical characteristics are discussed, indicating that the static potential drop is essentially supported by the Ge side in all diodes. This causes a peaking of the spectral photoresponse near the Ge energy gap.

ISSN:0021-8979    

DOI:10.1063/1.1663357

出版商:AIP    

年代:1974

数据来源: AIP

摘要:

Nitrogen has been implanted in GaAs1−xPxcrystals of direct (x=0.37) and indirect (x=0.50) compositions. Photoluminescence spectra for the implanted material are consistent with previously reported results for GaAs1−xPxwith N incorporated during growth. Implantations were performed at 200 keV with fluences sufficient to produce calculated peak N concentrations in the range 1017−1019cm−3. Samples heated to 200 °C during implantation exhibit improved annealing properties above 800 °C compared with room‐temperature implantations.

ISSN:0021-8979    

DOI:10.1063/1.1663358

出版商:AIP    

年代:1974

数据来源: AIP

ISSN:0021-8979    

DOI:10.1063/1.1663360

出版商:AIP    

年代:1974

数据来源: AIP