摘要:

The mass densityD, the atom number per unit volume &rgr;0and the packing fraction &eegr; were studied for amorphous (FeCo)100−y(SizB1−z)yalloys having zero magnetostriction in the range of 20≤y≤30 and 0≤z≤0.6. The variations ofDand &rgr;0withyandzare understood in terms of the atomic weight and the atomic radius of each atom. &eegr; is observed to increase with decreasing Si/(Si+B) ratio. This is attributed to the difference of the site occupation between B and Si atoms.

ISSN:0021-8979    

DOI:10.1063/1.334752

出版商:AIP    

年代:1985

数据来源: AIP

摘要:

The output signal in a deep‐level transient spectroscopy experiment is a function of both the rate‐window settings and sample temperature. Usually, the rate window is held fixed and the temperature scanned to produce the deep‐level spectrum. We will demonstrate that a deep‐level spectrum can also be obtained by fixing the temperature and scanning the rate window.

ISSN:0021-8979    

DOI:10.1063/1.334753

出版商:AIP    

年代:1985

数据来源: AIP

摘要:

Thee‐beam stimulated reaction, CdCl2(s)→Cd(s)+2 Cl(g), has been studied in cadmium chloride thin films between 303 and 483 K using 2‐keV electrons. The dose required to make 90‐nm‐deep holes at 483 K is 3×10−3C cm−2. Extrapolated dosing levels of ∼6×10−5C cm−2are expected. The use of CdCl2as a positive‐type electron resist in a new scheme is proposed. A working model, useful for considering thee‐beam stimulated decomposition energetics and mechanism, is briefly discussed.

ISSN:0021-8979    

DOI:10.1063/1.334754

出版商:AIP    

年代:1985

数据来源: AIP

摘要:

A quantitative connection is made between the time‐dependent field effect and 1/fnoise in semiconductor devices exhibiting surface state occupancy fluctuations. Noise and ac field effect measurements were made on a gated silicon‐on‐sapphire resistor, providing direct evidence of a surface state contribution of ∼10% of the net 1/fnoise.

ISSN:0021-8979    

DOI:10.1063/1.334755

出版商:AIP    

年代:1985

数据来源: AIP

摘要:

The growth rate of laser‐photoenhanced thermally grown native oxides of InP in a N2O ambient and its dependence on growth condition are presented. Increased laser power, substrate temperature, and N2O pressure are observed to increase the growth rate. The topography and the composition of these oxides have been studied, using secondary electron microscopy and x‐ray photoemission spectroscopy, respectively. The oxide layers contain In2O3and a phosphate, probably InPO4. The enhanced growth appears to be caused by both excited oxidizing species and a photon‐enhanced surface reaction.

ISSN:0021-8979    

DOI:10.1063/1.334756

出版商:AIP    

年代:1985

数据来源: AIP

摘要:

An x‐ray diffraction technique for determining thin‐film thickness is presented which should prove to be a valuable alternative to the array of spectroscopies (Rutherford backscattering spectrometry, Auger electron spectroscopy, etc.) currently favored for these measurements. Some of the virtues of this x‐ray diffraction approach are its nondestructive nature, fast data acquisition rate (enablinginsituobservations), thickness resolution better than 5 nm, and conventional equipment requirements. Results are shown for Pd2Si thin films grown during isothermal annealing of Pd coatings (100 nm) on Si at 200 °C for various amounts of time. A comparison of these x‐ray measurements with Rutherford backscattering spectrometry data taken from the same specimens is used to demonstrate the validity of the x‐ray technique.

ISSN:0021-8979    

DOI:10.1063/1.334757

出版商:AIP    

年代:1985

数据来源: AIP

摘要:

Current‐voltage characteristics of silicon diodes which were found to be ideal at room temperature have been investigated in the range 300–400 K. The diodes remain ideal at higher temperatures, too.

ISSN:0021-8979    

DOI:10.1063/1.334758

出版商:AIP    

年代:1985

数据来源: AIP

摘要:

A modified equation of state is proposed, which allows the use of the Arrott plots at high magnetic fields. The equation is shown to fit rather well the experimental data of Potter on crystalline Fe, and those of Kaul and Rosenberg on amorphous Fe13Ni67B19Si alloy.

ISSN:0021-8979    

DOI:10.1063/1.334759

出版商:AIP    

年代:1985

数据来源: AIP

ISSN:0021-8979    

DOI:10.1063/1.335511

出版商:AIP    

年代:1985

数据来源: AIP