摘要:

Tunnel‐junction dc SQUIDs are being fabricated from Nb films using electron‐beam lithography to define linewidths as small as 0.5 &mgr;m. The barriers in the Nb‐NbOx‐Nb junctions are grown in an oxygen plasma discharge, and the Pd2Si resistive shunts are formed by annealing Pd on the Si substrates. These devices have excellent storage and recycling properties. At a measurement frequency of 40 kHz, a SQUID with an inductance of about 1 nH, a critical current of about 4 &mgr;A, and a parallel shunt resistance of about 15 &OHgr; had an intrinsic energy resolution of 2.5×10−32J Hz−1at 4.2 K and 1.1×10−32J Hz−1at 1.6 K, in good agreement with a model of the dc SQUID.

ISSN:0021-8979    

DOI:10.1063/1.327869

出版商:AIP    

年代:1980

数据来源: AIP

ISSN:0021-8979    

DOI:10.1063/1.328405

出版商:AIP    

年代:1980

数据来源: AIP