摘要:

Optical and photosensitive properties of Ag4P2O7single crystals have been studied. The measured band gap is 3.4 eV and the transition is thought to be indirect. Ag4P2O7single crystals show photochromism. An absorption band centered at 500 nm is induced by near‐ultraviolet light irradiation, and transmission can be restored both by heating and by visible light irradiation. The absorption band also shows dichroism. The photochromic mechanism has been investigated using x‐ray photoelectron spectroscopy. It is found that silver ions are reduced and PO4tetrahedra are condensed by near‐ultraviolet light irradiation.

ISSN:0021-8979    

DOI:10.1063/1.334373

出版商:AIP    

年代:1985

数据来源: AIP

摘要:

The alloy formation on MIS solar cell metal surfaces due to the drive‐out diffusion have been studied here. Au and Ag were used as metal electrodes, SnO2as an interfacial layer, and GaAs as a substrate. These microscopic reactions at the interface and at the front metal surface are related to the performance and the stability of the GaAs, MS, and MIS solar cells.

ISSN:0021-8979    

DOI:10.1063/1.334374

出版商:AIP    

年代:1985

数据来源: AIP

摘要:

A model is presented for heterojunction solar cells, in which interface recombination is the dominant diode current mechanism, that relates the charging of interface states to the voltage dependence of the light‐generated currentjL(V). The model also shows how a diode ideality factor greater than two can occur. The calculations presented are for the small‐signal case, and do not treat the intensity dependence of the collection factor &eegr;(V)=jL(V)/jsc. The parameters chosen were such as to account for the trends seen in the CuInSe2/CdS solar cell.

ISSN:0021-8979    

DOI:10.1063/1.334375

出版商:AIP    

年代:1985

数据来源: AIP

摘要:

The spectral response of Schottky diodes on hydrogenated amorphous silicon implanted with boron has been investigated. The decrease in sensitivity in the short‐wavelength range has been observed in samples implanted with the boron dose of more than 1.6×1013ions/cm2. The experimental spectral responses are in good agreement with theoretical responses derived from the assumption that the photoexcited carriers are mainly transported by drift field.

ISSN:0021-8979    

DOI:10.1063/1.334376

出版商:AIP    

年代:1985

数据来源: AIP

摘要:

Photoemission measurements were performed on metal‐insulator‐silicon structures having thin thermal oxynitride films as the insulator. The results for the sample with the least oxidized nitride film, yield for the energy intervals from the insulator conduction band to the Fermi level of the aluminum and to the valence band of the silicon, the values of 3.3 and 3.6 eV, respectively. The affinity of the insulator as deduced from these values is larger at the silicon interface than at the aluminum interface by 0.8 eV, indicating that the film exhibits a graded energy barrier for electron injection from the electrodes.    

ISSN:0021-8979    

DOI:10.1063/1.334377

出版商:AIP    

年代:1985

数据来源: AIP

摘要:

An analysis of a measurement by Matsuda and co‐workers of the lifetimes of the free radicals involved in the glow‐discharge deposition of amorphous hydrogenated silicon from silane and disilane at 20‐mTorr pressure is consistent with the hypothesis that SiH or SiH2, but not SiH3, is the dominant radical in the deposition from silane at that pressure.

ISSN:0021-8979    

DOI:10.1063/1.334378

出版商:AIP    

年代:1985

数据来源: AIP

摘要:

Simple analytical models have been found that adequately describe the voltage behavior of both the stripe junction and the dot junction grating cells as a function of junction area. While the voltage in the former case is found to be insensitive to junction area reduction, significant voltage increases are shown to be possible for the dot junction cell. With regard to cells in which the junction area has been increased in a quest for better performance, it was found that (1) texturation does not affect the average saturation current densityJ0, indicating that the texturation process is equivalent to a simple extension of junction area by a factor of (3)1/2and (2) the vertical junction cell geometry produces a sizable decrease inJ0that, unfortunately, is more than offset by the effects of attendant areal increases.

ISSN:0021-8979    

DOI:10.1063/1.334379

出版商:AIP    

年代:1985

数据来源: AIP

摘要:

The electron drift velocities in GaAs and In0.53Ga0.47As have been measured at room temperature and at liquid‐nitrogen temperature for electric fields up to the onset of the Gunn effect. The experiments were performed on samples with carrier concentrations from 4×1014to 1×1018cm−3. The results illustrate effects of ionized impurity scattering, polar optical phonon scattering, alloy scattering, and intervalley scattering on electron transport in this range of electric fields, and confirm the potential of In0.53Ga0.47As for high‐speed device applications.

ISSN:0021-8979    

DOI:10.1063/1.335464

出版商:AIP    

年代:1985

数据来源: AIP

摘要:

Depth distributions of 300‐keV protons implanted inn‐type GaAs and characteristics of the associated damage in the crystalline material have been obtained. Range profiles of the implanted1H ions as a function of substrate implantation temperature have been determined using secondary ion mass spectrometry for fluences of 5×1014and 5×1015cm−2. The projected range for the protons was approximately 2.7 &mgr;m for the room temperature implants, but a significant rearrangement of the1H atoms occurred during elevated temperature implantation. While cross‐sectional transmission electron microscopy showed no evidence of crystal damage in as‐implanted wafers, plan‐view measurements revealed platelike damage structures in the surface region (< 1&mgr;m).

ISSN:0021-8979    

DOI:10.1063/1.334328

出版商:AIP    

年代:1985

数据来源: AIP

摘要:

The fabrication of a high performance GaAs0.7P0.3solar cell on a transparent GaP substrate with an AM1.5 efficiency of 15.4% for a concentration ratio of 30× is reported for the first time. The measured transparency of the GaP substrate allows these cells to be mechanically stacked on silicon solar cells in a manner that should yield combined conversion efficiencies well over 25%. This mechanically stacked two‐band‐gap cell design is particularly attractive because it utilizes the already well‐developed Si solar cell and because the materials foundation for the GaAs0.7P0.3on GaP cell has been laid by work on light emitting diodes.

ISSN:0021-8979    

DOI:10.1063/1.334329

出版商:AIP    

年代:1985

数据来源: AIP