摘要:

With the aid of a mode diagram, the qualitative dependence of phase space trajectory on power and saturation for saturable nonlinear couplers is revealed. The uplimit of power (due to saturation of nonlinearity) for efficient switching by a nonlinear coupler is evaluated.

ISSN:0021-8979    

DOI:10.1063/1.345626

出版商:AIP    

年代:1990

数据来源: AIP

摘要:

The electrical properties of the photochemical vapor‐deposited silicon nitride/silicon interface are presented as a function of deposition temperature (70 to 200 °C). High values of interface state densityNss(about 3×1012cm−2eV−1), an equivalent charge at the interfaceQss(about 5×1011cm−2), and an important injection‐type hysteresis of the capacitance voltageC‐Vcurves are observed in the as‐grown material. Most defects are found to be generated during the deposition process by the ultraviolet illumination used to activate the chemical reaction of the gases. Low‐temperature (250 °C) and short‐time (30 min) annealings eliminate part of the defects, resulting in lower values ofNss(about 1×1012cm−2eV−1),Qss(about 5×1010cm−2), and reduced injection‐type hysteresis.

ISSN:0021-8979    

DOI:10.1063/1.345627

出版商:AIP    

年代:1990

数据来源: AIP

ISSN:0021-8979    

DOI:10.1063/1.346112

出版商:AIP    

年代:1990

数据来源: AIP