摘要:

These recent theoretical papers, by the same authors, derive the quantities given in the titles. The authors used a ’’wire’’ model for the helix, which is supposed to be more rigorous than the ’’tape’’ or ’’sheath’’ models used in papers published 25 or more years ago. By using experimental data from a paper referenced by the authors, it is shown that the sheath model fits the measurements better than the wire model used here.

ISSN:0021-8979    

DOI:10.1063/1.328388

出版商:AIP    

年代:1980

数据来源: AIP

摘要:

In this work we report on the influence of uniaxial pressure applied perpendicularly to junction laser on the behavior of the critical temperature for the onset of long delays in GaAs junction lasers. Experimental data showing this influence for lasers operating in a TE or TM polarization are presented and explained on the basis of a thermal theory of long delays and related phenomena.

ISSN:0021-8979    

DOI:10.1063/1.328355

出版商:AIP    

年代:1980

数据来源: AIP

摘要:

This paper describes the fabrication of a plasma‐polymerized siloxane insulated‐gate field‐effect transistor which permits the study of the polymer‐silicon interface. Preliminary results are reported on both fixed surface charge density (1.7×1012cm−2) and hole mobility (500 cm2/V sec) in aP‐channel metal‐insulated semiconductor field‐effect transistor.

ISSN:0021-8979    

DOI:10.1063/1.328356

出版商:AIP    

年代:1980

数据来源: AIP

摘要:

A previously published analysis of the magnetic field variation of the reflected microwave power from small unbiased Pb‐O‐Pb Josephson junctions found strong temperature dependences for the basic tunnel parameters. We reanalyze those measurements employing independent variables, compensating for spurious external reflections, and accounting for noise reduction of the dc critical current. The cos&fgr; amplitude &zgr; is positive nearTcand becomes negative at lower temperatures. In contrast to the previous work &zgr; is less sharply peaked, the junction rf resistance varies smoothly, and the capacitance is temperature independent. Our results clearly disagree with recent theoretical work.

ISSN:0021-8979    

DOI:10.1063/1.328357

出版商:AIP    

年代:1980

数据来源: AIP

摘要:

Drilling in thin metal plates has been studied with two types of pulses from an ordinary flash‐lamp‐pumped Nd‐YAG laser. The drilling performance with a normal pulse consisting of a 200‐&mgr;s continuous emission preceeded by a few relaxation oscillations has been compared with that of a 200‐&mgr;s train of 0.5‐&mgr;s pulses. The pulse train was obtained by introducing a periodic low loss into the laser resonator with the frequency of the relaxation oscillations. It is shown that the use of the pulse train is much superior to the normal pulse for drilling in aluminium and similar metals.

ISSN:0021-8979    

DOI:10.1063/1.328358

出版商:AIP    

年代:1980

数据来源: AIP

摘要:

The short circuit current densityJscof indium tin oxide/single and polycrystalline silicon solar cells reported by Schunck and Coche [Appl. Phys. Lett. 35, 863 (1979)] is much higher than other silicon solar cells. We have shown that theJscreported in the above reference does not represent the true value of these devices.

ISSN:0021-8979    

DOI:10.1063/1.328359

出版商:AIP    

年代:1980

数据来源: AIP

ISSN:0021-8979    

DOI:10.1063/1.328411

出版商:AIP    

年代:1980

数据来源: AIP

ISSN:0021-8979    

DOI:10.1063/1.328410

出版商:AIP    

年代:1980

数据来源: AIP