摘要:

The transient, excess source‐drain current which occurs under freeze‐out conditions when a metal‐oxide‐semiconductor field‐effect transistor (MOSFET) is switched into a conducting state is described. The major features of the observed transient response forn‐channel MOSFET’s in the temperature range 10–25 °K are explained in terms of a simple one‐dimensional model. The transient response is largely independent of both temperature (in this range) and the static current level, except for the variation of relaxation rate with temperature. The transient response waveform and the temperature dependence of the relaxation rate forn‐channel MOSFET’s differ greatly from previously reported results onp‐channel MOSFET’s.

ISSN:0021-8979    

DOI:10.1063/1.331131

出版商:AIP    

年代:1982

数据来源: AIP

摘要:

Subnanosecond current gain response of a GaAs power metal‐semiconductor field‐effect transistor to electron‐beam pulses is described. Two distinct gain mechanisms are deduced from the data.

ISSN:0021-8979    

DOI:10.1063/1.331087

出版商:AIP    

年代:1982

数据来源: AIP

摘要:

Photocapacitance spectra of the excitation probability of electrons (or holes) occupied in deep levels have been measured for S‐ and Te‐doped nitrogen‐free GaP light‐emitting diodes grown by temperature difference method of liquid phase epitaxy under various phosphorus pressures in the vicinity of the optimum pressure (Popt). A band at 2.00 eV observed for the diodes grown under phosphorus pressures higher thanPoptis attributed to interstitial phosphorus atoms. On the other hand, bands at 2.10 and 2.20 eV which were observed, respectively, in the spectra of S‐ and Te‐doped diodes grown under phosphorus pressure lower thanPoptare attributed to complex centers of phosphorus vacancies and donors.

ISSN:0021-8979    

DOI:10.1063/1.331088

出版商:AIP    

年代:1982

数据来源: AIP

摘要:

High gradient magnetic retention of paramagnetic red blood cells was measured under conditions which gave rise to only partial capture of the cells in each sample. The dependence on buffer flow rate, magnetic field, and particle paramagnetic susceptibility was determined and compared with theoretical models. In addition, parallel and transverse geometries (field parallel to, or perpendicular to, flow) were compared and no difference was observed in the probability of capture of weakly paramagnetic cells in a lightly loaded filter bed.

ISSN:0021-8979    

DOI:10.1063/1.331089

出版商:AIP    

年代:1982

数据来源: AIP

摘要:

Multitube collimators driven at low pressure, usually 1 Torr or less, have been extensively used up to now to produce collimated molecular beams. We have found experimentally that such devices, when driven at high pressure, 1<P0<100 Torr, lose almost completely their collimation properties. However, they produce a sensible cooling of the gas in the beam at a density high enough to make the high‐pressure regime attractive for molecular spectroscopy. Moreover, we have observed for the first time an oscillatory behavior of the angular spread of the beam versus the pressure.

ISSN:0021-8979    

DOI:10.1063/1.331090

出版商:AIP    

年代:1982

数据来源: AIP

摘要:

A ray optical description is presented for the TM wave guided by a slab of uniaxially anisotropic plasma. An interesting feature of the totally reflected ray within the slab is brought out.

ISSN:0021-8979    

DOI:10.1063/1.331091

出版商:AIP    

年代:1982

数据来源: AIP

摘要:

Ion implantation of Mg into AlxGa1−xAs was carried out at room temperature. After annealing at 700 °C, GaAs showed nearly 100% electrical activation, however, Al0.60Ga0.40As showed only 15% electrical activation. We explain this result in terms of increasing acceptor energy level and outdiffusion of Mg with increasing alloy compositionx.

ISSN:0021-8979    

DOI:10.1063/1.331092

出版商:AIP    

年代:1982

数据来源: AIP

摘要:

It is suggested that the infrared absorption spectrum of the localized vibrational modes of Al‐doped ZnSe can be explained by two Al defects: AlZnand an Al dimer, possibly 2AlAn‐VZn, where the 2AlZnand theVZnare all second‐nearest neighbors.

ISSN:0021-8979    

DOI:10.1063/1.331093

出版商:AIP    

年代:1982

数据来源: AIP

摘要:

Amorphous silicon thin films deposited on glass substrates were crystallized by pulsed‐laser annealing. A grain size up to 2000 A˚ was observed. Transistors were made, and electrical measurements showed that the field‐effect mobility was in the range 15–20 cm2/V s, instead of 10−2−10−3cm2/V s in the unannealed regions.

ISSN:0021-8979    

DOI:10.1063/1.331094

出版商:AIP    

年代:1982

数据来源: AIP

摘要:

A method to determine densities of thin surface films by measuring areal densities using Rutherford backscatter spectroscopy coupled with linear film‐thickness measurements is described. This technique can be nondestructive and has an accuracy of 10 to 15%. Sample measurements on various thin films are given to demonstrate the use of this procedure.

ISSN:0021-8979    

DOI:10.1063/1.331095

出版商:AIP    

年代:1982

数据来源: AIP