摘要:

Synchrotron‐radiation (SR) ‐excited chemical‐vapor deposition of Ge crystals on Si(100) using GeH4has been investigated. When SR is incident parallel to the surface, reaction between a photofragment and a surface hydride yields constant deposition rate. Above 280 °C, thermal growth rate limited by H2desorption at the surface is superimposed. When SR is perpendicularly directed to the surface, the growth is enhanced and the activation barrier is reduced. Electronic excitation of admolecules may open an efficient bond rearrangement pathway to densify the hydrogen‐rich Si film. The Ge film is uniform at high pressures due to surfactant effect of hydrogen atoms, but when islanding occurs with decreasing hydrogen coverage, the activation energy further decreases. Isothermal Si/Ge multilayer growth at 300 °C is demonstrated by alternately feeding GeH4and Si2H6. ©1996 American Institute of Physics.

ISSN:0021-8979    

DOI:10.1063/1.362575

出版商:AIP    

年代:1996

数据来源: AIP

摘要:

Three kinds of textures, i.e., (200), (111), and (220) of TiN films prepared by filtered arc deposition have been continuously observed with varying film thickness and bombarding energy of the deposited particles. The evolution of the texture from (200) to (111), then to (220) is discussed on the basis of the so‐called overall energy which consists of the surface energy, the strain energy, and the stopping energy of the films. ©1996 American Institute of Physics.

ISSN:0021-8979    

DOI:10.1063/1.362576

出版商:AIP    

年代:1996

数据来源: AIP

摘要:

A correction to the expression [W. Nakwaski, J. Appl. Phys.67, 2711 (1990)] for the three‐dimensional temperature distribution in the heat sink of a laser is presented. It is also extended to the case of anoddnumber of laser chips. ©1996 American Institute of Physics.

ISSN:0021-8979    

DOI:10.1063/1.362693

出版商:AIP    

年代:1996

数据来源: AIP

摘要:

A short reply to the Comment by A. D. Sadovnikov on ‘‘Three‐dimensional analysis of a heat‐spreading phenomenon in phase‐locked arrays of oxide‐isolated diode lasers’’ is presented. ©1996 American Institute of Physics.

ISSN:0021-8979    

DOI:10.1063/1.362679

出版商:AIP    

年代:1996

数据来源: AIP