摘要:

Low‐temperature photoluminescence was used to study the Si+‐ and Si++P+‐implanted InP. A broadband at ∼ 1.26 eV appears in photoluminescence spectra for Si+‐implanted InP after annealing. The intensity of this broadband decreases with increasing the coimplanted P+dose and increases with increasing the implanted Si+dose. The temperature dependence of the photoluminescence data shows that the change in the half‐width of the broadband can fit the configuration coordinate model. This band is believed to be due toVP‐SiPcomplex. The results indicate that silicon is an amphoteric species in InP.

ISSN:0021-8979    

DOI:10.1063/1.346123

出版商:AIP    

年代:1990

数据来源: AIP

摘要:

Nonlinear refractive index changes for the wavelengths near the fundamental edge in an ultrapure epitaxial layer of GaAs were obtained directly by the photoreflectance method. The nonlinearities are due to the electric field effect for pump intensities lower than 0.06 W/cm2and the plasma screening and the band filling effect for pump intensities higher than 0.06 W/cm2.

ISSN:0021-8979    

DOI:10.1063/1.346124

出版商:AIP    

年代:1990

数据来源: AIP

摘要:

A new self‐aligned subtractive gate process is proposed by alternating several masking and polycrystalline silicon gate etching steps from a conventional process to build high‐voltage (up to 100 V) and complementary thin‐film transistors (TFT) on insulating substrates. The new process is compatible with conventional TFT mask sets and standard processing techniques. The advantage of using this new process is to eliminate the difficulty in stripping photoresist on insulating substrates after high‐dose phosphorus implant and to improve the off‐state breakdown voltage in high‐voltage transistors. Complementary metal‐oxide‐semiconductor and high‐voltage TFT devices were successfully fabricated by this new process.

ISSN:0021-8979    

DOI:10.1063/1.346125

出版商:AIP    

年代:1990

数据来源: AIP

摘要:

An improved version of a prior model is given for specific resistance of ohmic contacts ton‐GaAs. Instead of the two‐band model used in the prior work for the transmission coefficient, a more rigorous three‐band model due to E. O. Kane [J. Phys. Chem. Solids1, 249 (1957)] is used in the improved version. In the doping range of interest, the theoretical contact resistance can differ by more than an order of magnitude, particularly at high intrinsic barrier heights. The contact resistance is given as a function of doping and the intrinsic barrier height. An ultimate limit to the contact resistance is also given.

ISSN:0021-8979    

DOI:10.1063/1.346126

出版商:AIP    

年代:1990

数据来源: AIP

ISSN:0021-8979    

DOI:10.1063/1.347207

出版商:AIP    

年代:1990

数据来源: AIP