81. |
Damped oscillation in a thin film optical slab‐type directional coupler covered with a high‐index absorbing material |
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Journal of Applied Physics,
Volume 51,
Issue 6,
1980,
Page 3428-3430
K. Sasaki,
F. Minami,
S. Aoyagi,
Y. Todaka,
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摘要:
It is shown that in a thin‐film optical slab‐type directional coupler, the synchronization condition can be controlled by adjusting the thickness of an additional high‐index top layer. Damped oscillation was accompanied by the absorbing property of the top‐layer material.
ISSN:0021-8979
DOI:10.1063/1.328059
出版商:AIP
年代:1980
数据来源: AIP
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82. |
Deuterization of synthetic quartz |
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Journal of Applied Physics,
Volume 51,
Issue 6,
1980,
Page 3431-3432
Nicholas Koumvakalis,
Mark Markes,
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摘要:
Conditions sufficient for the electrolytic exchange of D+for H+ions in synthetic quartz are established. The deuterium‐swept quartz crystals are characterized by electron paramagnetic resonance and infrared absorption.
ISSN:0021-8979
DOI:10.1063/1.328025
出版商:AIP
年代:1980
数据来源: AIP
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83. |
Combinations of third‐order elastic constants of lead |
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Journal of Applied Physics,
Volume 51,
Issue 6,
1980,
Page 3433-3434
B. E. Powell,
M. J. Skove,
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摘要:
Lead filamentary crystals have been subjected to finite deformations. The parameter &dgr; associated with deviations from linearity in Hooke’s law in the form &egr;=s′11&sgr; +&dgr;(s′11&sgr;)2(where &egr; is the strain, &sgr; the stress, ands′11Young’s modulus along the whisker axis) has a value of 4.2±0.6 for four crystals oriented in the 〈110〉 direction. The resulting linear combination of third‐order constants is,C111−4.6C112+3.6C123+3.1C144−3.7C166=4.4×1011N/m2.
ISSN:0021-8979
DOI:10.1063/1.328026
出版商:AIP
年代:1980
数据来源: AIP
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84. |
Comment on ’’Anisotropy study of electrical conduction in oriented polymers. I. Analysis of bulk electrical conduction parallel to the surface of film’’ |
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Journal of Applied Physics,
Volume 51,
Issue 6,
1980,
Page 3435-3436
H. J. Wintle,
T. C. Chapman,
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摘要:
We examine the field pattern produced by the four‐electrode system attached symmetrically to both sides of a film which was investigated by Hirota. We provide a conformal transformation which ensures that an electric field line is coincident with the film surface. The conductivity in the film is calculated and compared with experimental results.
ISSN:0021-8979
DOI:10.1063/1.328027
出版商:AIP
年代:1980
数据来源: AIP
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85. |
Reply to ’’Comment on ’Anisotropy study of electrical conduction in oriented polymers. I. Analysis of bulk electrical conduction parallel to the surface of film’ ’’ |
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Journal of Applied Physics,
Volume 51,
Issue 6,
1980,
Page 3437-3437
S. Hirota,
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摘要:
In reply to Wintle and Chapman, we point out that in the experimental condition, the allowed geometry factor of four‐electrode system will be limited within a range of values.
ISSN:0021-8979
DOI:10.1063/1.328028
出版商:AIP
年代:1980
数据来源: AIP
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86. |
1/fnoise in Hall effect: Fluctuations in mobility |
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Journal of Applied Physics,
Volume 51,
Issue 6,
1980,
Page 3438-3438
T. G. M. Kleinpenning,
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摘要:
From theoretical and experimental investigations on 1/fnoise in the Hall voltage at high magnetic induction it is concluded that 1/fnoise is caused by mobility fluctuations.
ISSN:0021-8979
DOI:10.1063/1.328029
出版商:AIP
年代:1980
数据来源: AIP
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87. |
The general critical state model in two dimensions and zero applied field: A uniqueness theorem and some consequences |
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Journal of Applied Physics,
Volume 51,
Issue 6,
1980,
Page 3439-3440
A. Migliori,
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摘要:
A general critical state model describes the field and current distributions in a hard Type II superconductor with a local relation between the field and current density. We show here that such models cannot provide a magnetically shielded region in superconducting wires in zero applied field.
ISSN:0021-8979
DOI:10.1063/1.328030
出版商:AIP
年代:1980
数据来源: AIP
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88. |
Enhanced secondary electron emission yield from doped vanadate‐phosphate glasses |
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Journal of Applied Physics,
Volume 51,
Issue 6,
1980,
Page 3441-3443
E. A. Flinn,
M. Salehi,
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摘要:
Previous measurements of secondary electron emission from vanadate‐phosphate glasses, using extremely clean surfaces, suggest that where these materials are used in practice as secondary emitters, surface contamination by materials such as cesium plays an important role. Samples of glasses containing significant quantities of cesium in the initial melt were manufactured, and did indeed show increases of 50% or more in the secondary electron emission yield. The yield increased monotonically with cesium content for all samples tested. The inelastic reflection coefficient for these materials was high—about 0.2. Similar materials containing sodium rather than cesium behaved very similarly where the V2O5content was 60% or more, although the reflection coefficient was lower—about 0.1. Where the V2O5content was less than 60%, however, high sodium concentrations produced a drastic fall in yield. V2O5‐P2O5‐Cs2O or V2O5‐P2O5‐Na2O glasses are easily manufactured by the same techniques as V2O5‐P2O5materials, and in view of their increased secondary electron emission coefficient, they should prove useful as secondary emitters in a variety of applications.
ISSN:0021-8979
DOI:10.1063/1.328031
出版商:AIP
年代:1980
数据来源: AIP
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89. |
Formation of Ohmic contacts in semiconducting oxides |
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Journal of Applied Physics,
Volume 51,
Issue 6,
1980,
Page 3444-3446
J. Narayan,
V. N. Shukla,
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摘要:
A new technique based on deposition of metallic film at room temperature followed by laser irradiation, for the formation of Ohmic Contacts on semiconducting oxides, has been developed. Aluminum or nickel film about 1 &mgr;m thick was deposited onn‐type polycrystalline barium titanate (BaTi03) substrates and irradiated withQ‐switched ruby laser pulses. This technique produces low‐resistance Ohmic contacts which do not age and remain stable over a wide temperature range.
ISSN:0021-8979
DOI:10.1063/1.328032
出版商:AIP
年代:1980
数据来源: AIP
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