81. |
Trap depths in the depletion region of single‐crystal CdS‐Cu2S heterojunctions |
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Journal of Applied Physics,
Volume 49,
Issue 2,
1978,
Page 934-935
Akihiko Kobayashi,
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摘要:
The experiment of the admittance spectroscopy was carried out for the single‐crystal CdS‐Cu2S heterojunction in which the Cu2S was grown chemically on the Cd and S plane of CdS single crystal. The results showed that the concentration of the trapped electrons at the several trapping levels in the depletion layer of the former heterojunction decreases with increasing temperature. The opposite effect, however, was obtained for the latter heterojunction at the temperature below 210 K. The causes for the difference in the heterojunctions will be discussed in this paper.
ISSN:0021-8979
DOI:10.1063/1.324632
出版商:AIP
年代:1978
数据来源: AIP
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82. |
Superconducting wires of PbMo5.1S6by a powder technique |
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Journal of Applied Physics,
Volume 49,
Issue 2,
1978,
Page 936-938
Thomas Luhman,
D. Dew‐Hughes,
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摘要:
Wires of PbMo5.1S6have been prepared by drawing sintered and powdered ternary sulfide in a metal sheath. Subsequent annealing at high temperatures (850–1000 °C) is necessary to restoreTcto its maximum value ∼14.4 K. The sheath material must not react with and reduce the sulfide, and of the common metals this limits the choice to silver. Critical fieldsBc2(4.2 K) ?51 T of these wires are the same as for the best powder samples, but current densities,Jc(4.2 K, 4 T) ∼ (1–5) ×107A/m2, are disappointingly low.
ISSN:0021-8979
DOI:10.1063/1.324608
出版商:AIP
年代:1978
数据来源: AIP
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83. |
High domain‐wall velocities in (Gd,Lu)3(Fe,Mn,Al)5O12garnet epilayers with orthorhombic anisotropy |
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Journal of Applied Physics,
Volume 49,
Issue 2,
1978,
Page 939-941
D. J. Breed,
A. M. J. van der Heijden,
H. Logmans,
A. B. Voermans,
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摘要:
Garnet films can be given orthorhombic anisotropy by growing films with positive magnetostriction constants under compression on (110) ‐oriented substrates. The positive magnetostriction is achieved by the incorporation of Mn3+ions in (Gd,Lu)3Fe5O12films. In this way bubble films with a strong in‐plane anisotropy field are obtained. This in‐plane anisotropy increases the maximum velocity of the domain walls to at least 40 000 cm s−1. The domain‐wall mobility in these films is about 1500 cm s−1 Oe−1. The dependence of the domain‐wall velocity on the anisotropy and on the orientation of the domain wall in the film plane is shown.
ISSN:0021-8979
DOI:10.1063/1.324633
出版商:AIP
年代:1978
数据来源: AIP
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84. |
On the efficient calculation of magnetic bubble functions |
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Journal of Applied Physics,
Volume 49,
Issue 2,
1978,
Page 942-943
C. J. Hegedu¨s,
E. Della Torre,
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摘要:
The various magnetic bubble stability functions as well as the field due to a bubble are all expressed in terms of a single generalized complete elliptic integral. This integral can be computed efficiently to arbitrary accuracy using the Bartky transformation.
ISSN:0021-8979
DOI:10.1063/1.324634
出版商:AIP
年代:1978
数据来源: AIP
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85. |
On the effects of thermal expansion in metal‐matrix composites |
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Journal of Applied Physics,
Volume 49,
Issue 2,
1978,
Page 944-945
Frederick E. Wang,
Raymond A. Sutula,
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摘要:
Based on a qualitative argument, it is shown that the detrimental effect due to differential thermal expansion existing between fiber and metal‐matrix in MMC (metal‐matrix composite) is minimized for shorter fibers. The ’’ideal’’ aspect ratio for fibers found experimentally in MMC is also justifiable within the same argument.
ISSN:0021-8979
DOI:10.1063/1.324635
出版商:AIP
年代:1978
数据来源: AIP
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86. |
Use of heavy doping effects to calculate the electrostatic field acting on the impurity atoms |
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Journal of Applied Physics,
Volume 49,
Issue 2,
1978,
Page 946-948
R. K. Jain,
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摘要:
Considering the heavy‐doping and high‐temperature effects, the electrostatic field acting on the phosphorus atoms into silicon during their diffusion at high temperatures is calculated. It is found that our theory predicts a smaller field than the classically expected results. This anomaly is explained basically by the fact that the Debye length decreases with the increase in the impurity concentration, which ultimately reduces the electric field produced.
ISSN:0021-8979
DOI:10.1063/1.324606
出版商:AIP
年代:1978
数据来源: AIP
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