摘要:

Variations of Hall mobility with gate bias in gated Hall measurements are explained by considering autodoping of silicon from the sapphire substrate. The method of obtaining the ``true'' electron Hall mobility forn‐doped silicon is presented and the conductivity due to thep‐type impurities is found.

ISSN:0021-8979    

DOI:10.1063/1.1663680

出版商:AIP    

年代:1974

数据来源: AIP

摘要:

A semiempirical equation describing laser beam divergence for a flat‐flat laser resonator taking into consideration the resonatorQis tested. This equation describing beam divergence consists of two parts: a contribution due to diffraction and distortion in the resonator material and a term which accounts for cavity geometry and photon lifetime. Good agreement is obtained with experiment.

ISSN:0021-8979    

DOI:10.1063/1.1663681

出版商:AIP    

年代:1974

数据来源: AIP

ISSN:0021-8979    

DOI:10.1063/1.1663684

出版商:AIP    

年代:1974

数据来源: AIP