摘要:

In a recent comment by Prelas and Schlapper, the statement was made that in a paper by Carter, Rowe, and Schneider, the Ne line at 632.8 nm claimed to be observed could not have been observed, since the upper state population of the laser transition could not have possibly have been sufficient to allow lasing. The comment is based on a simple model introduced by Prelas and Schlapper. We show, in this response, that this model is conceptually wrong. In addition, a calculational error was made when they computed the power input to be 4.7 mW/cm3rather than the correct value of 9.8 mW/cm3.

ISSN:0021-8979    

DOI:10.1063/1.328670

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

Lasers with mixed line broadening typically oscillate in a single longitudinal mode for excitation levels only slightly above threshold. At high pump levels, less desirable multimode oscillation may sometimes occur. A procedure is described for using the multimode threshold as a sensitive measure of the broadening ratio, and GaAs is mentioned as an example.

ISSN:0021-8979    

DOI:10.1063/1.328660

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

High‐repetition‐rate reactive electrooptic Q switching of a CO2laser was demonstrated. It was shown to be more efficient than a comparable polarization Q switch, but more sensitive to frequency instabilities.

ISSN:0021-8979    

DOI:10.1063/1.328661

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

Substrate orientation effects on carrier‐concentration profiles have been found for Se implantation in GaAs. Doping profiles formed in both (111)‐ and (100) ‐oriented GaAs by Se implantation are examined. For (111) samples, anomalous carrier‐concentration profile is obtained near the surface when Se ions are implanted at room temperature. On the other hand, such anomality is not detected for (100) samples. Furthermore, such orientation effect is found lessened for Se implantation at 400 °C.

ISSN:0021-8979    

DOI:10.1063/1.328662

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

We measured 1/fnoise in gate‐controlledp‐type implanted resistors in which the surface could be brought from accumulation to strong inversion. The noise increased by a factor of 150 when the surface was brought from accumulation to strong inversion. The results indicate strongly that the noise is due to the interaction of electrons in the inversion layer with the surface oxide. This gives rise to a fluctuating surface potential which in turn give a 1/fmodulation of the surface mobility.

ISSN:0021-8979    

DOI:10.1063/1.328663

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

Materials undergoing shock or impact loading experience heating due to that loading. This heating, frequently localized in the form of hot spots, can play a significant role in determining the physical and chemical response of the material to the load. To date this phenomenon has been inadequately investigated due to, at least in part, a lack of experimental techniques. Here we present a simple method for obtaining both spatial and temperature information of the heat generated in shocked or impact‐loaded materials. We present some results showing the spatial heat patterns that result when NaCl crystals undergo impact loading.

ISSN:0021-8979    

DOI:10.1063/1.328664

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

Thermally induced Si accumulation onto Pd2Si surfaces has been studied for the first time with synchrotron radiation photoemission. Evidence is given of the formation of strong bonds between Si and Pd in the transition region between Pd2Si and Si. The results are discussed in view of the Pd‐Si interfaces prepared by annealing in device technology.

ISSN:0021-8979    

DOI:10.1063/1.328665

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

Contact resistivity measurements of laser annealed AuGe/GaAs ohmic contacts as a function of depth (contact resistivity profiling) has shown a monotonically increasing contact resistivity profile for energy densities lower than 2.12 J/cm2. For energy densities higher than 2.12 J/cm2a minimum in the profiles was observed at a depth of 1200 A˚. This suggests that minima previously observed in the variation of contact resistivity as a function of laser energy density are due to a surface phenomenon. These profiles further show that ohmic contacts can be made to GaAs by deposition of metal films on GaAs surfaces from which laser annealed AuGe films have been removed. Contact resistivities as low as 1×10−6&OHgr; cm2were obtained even when metal was deposited on GaAs etched to a depth of 1000 A˚. Secondary ion mass spectroscopy profiles are included which allow the redistribution of Ge into GaAs to be compared with these contact resistivity profiles.

ISSN:0021-8979    

DOI:10.1063/1.328666

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

The effect of Zn+and Cd+primary ions with energies between 3 and 10 keV on the emission of secondary Cu+, Cu+2, and Mo+ions from polycrystalline copper and molybdenum target surfaces has been investigated. It was found that secondary ion intensity increases almost linearly with bombarding ion energy, attains a broad maximum, and then decreases steadily. It has also been observed that the location of the maximum depends strongly on the ion‐target combination. The positions of maxima were found to be around 7.5, 6.5, and 5.0 keV for Zn+‐Cu, Cd+‐Cu, and Cd+‐Mo combinations, respectively. Our finding could be experimental evidence of the fact that the nontextured surfaces may become textured under ion bombardment.

ISSN:0021-8979    

DOI:10.1063/1.328667

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

As an antireflection coating material a Ta2O5film is deposited onto the surface of Au for Au‐CdS solar cells by vacuum evaporation in the presence of O2at a total gas pressure of about 10−4–10−5Torr. The reflectance is measured in the spectral region from 330–600 nm. It is found that the optimum thickness of Ta2O5film for 200 A˚ of Au thickness is 1220 A˚, in which case the minimum reflectance is approximately zero at 480 nm. On both sides of the minimum value the reflectance rises steeply. For a fixed thickness of Ta2O5the position of wavelength at minimum reflectance has a slight tendancy to move to a longer wavelength with increasing thickness of Au film.

ISSN:0021-8979    

DOI:10.1063/1.328668

出版商:AIP    

年代:1981

数据来源: AIP