摘要:

The optical frequency shift in the collinear magnetostatic wave–optical guided mode interaction has been observed by directly measuring the change in optical wavelength due to magnetostatic waves in the 2–12 GHz range. The experimental shift is found to be in good agreement with the theoretically predicted value of 0.058 A˚/GHz at &lgr;0=1.319 &mgr;m.

ISSN:0021-8979    

DOI:10.1063/1.345234

出版商:AIP    

年代:1990

数据来源: AIP

摘要:

Observation of the Doppler shift of magnetostatic waves and a new linear velocity and position sensor based on this effect are reported. The sensor consists of a magnetostatic surface‐wave delay line in which one transducer is allowed to move along the direction of propagation. Position and velocity are indicated by the phase and Doppler shift of the transmitted signal, respectively. These effects are much larger than would be observed with ordinary electromagnetic waves at the same frequency owing to the shorter wavelengths of magnetostatic waves.

ISSN:0021-8979    

DOI:10.1063/1.345235

出版商:AIP    

年代:1990

数据来源: AIP

摘要:

A WSi2/polycrystalline silicon/Si bulk system has been studied in the framework of a complementary metal‐oxide‐semiconductor compatible self‐aligned bipolar transistor technology. The WSi2silicide is implanted with As and used as a dopant source for the formation of the polycrystalline silicon‐bulk emitter. The effect of the polycrystalline silicon/monocrystalline silicon interface has been investigated, as well as the reproducibility of the process for the emitter formation. The role of boron on the arsenic diffusion process has been analyzed, with boron being implanted (a) in the silicon bulk for the intrinsic base formation, and (b) in the WSi2silicide at the extrinsic base implantation step in the self‐aligned process. Experimental results give dopant diffusion and segregation coefficients and are used to adjust the parameters of our process simulation program on the technological process.

ISSN:0021-8979    

DOI:10.1063/1.345236

出版商:AIP    

年代:1990

数据来源: AIP

摘要:

Low dose ion implantation through the Pt/Si silicon interface prior to annealing has been shown to yield a more planar PtSi/Si interface after annealing. The electrical characteristics of these ion mixed diodes have also been shown to be more uniform from device to device as well as more nearly approaching theoretical performance than conventionally prepared diodes.

ISSN:0021-8979    

DOI:10.1063/1.345237

出版商:AIP    

年代:1990

数据来源: AIP

摘要:

Metal‐insulator‐semiconductor field‐effect transistors (MISFETs) based on organic semiconductors, mainly conjugated organic polymers and oligomers, have been reported recently. Unlike conventional MISFETs, these devices work through the modulation of an accumulation layer at the semiconductor‐insulator interface. A model for organic MISFETs, derived by changing the classical equations according to this particular operating mode is proposed. The ohmic current, parallel to the channel current, and due to the nonrectifying character of source and drain contacts, has also been taken into account. According to this model, the characteristics of these organic devices can be improved by decreasing the doping level and the thickness of the semiconducting layer. Simple rules are deduced and applied to devices based on &agr;‐conjugated sexithienyl.

ISSN:0021-8979    

DOI:10.1063/1.345238

出版商:AIP    

年代:1990

数据来源: AIP

摘要:

Czochralski‐grown dislocation free silicon crystals containing approximately 7.5, 9.9, and 18×1017cm−3oxygen atoms have been annealed at 750, 1050, and 1200 °C for times varying between 20 and 216 h. Neutron transmission spectra measured at reflection 111 in backscattering geometry reveal mean lattice contractions of the order of 5×10−5and lattice parameter fluctuations up to &Dgr;d/d≊5×10−4. The measuring time for one spectrum is 15 min and an on‐line characterization of the defects produced during annealing is feasible. A combination of this technique with neutron small angle scattering, &ggr;‐ray diffractometry, and diffraction experiments with high‐energy synchrotron radiation opens new possibilities for investigations of oxygen precipitation in silicon crystals as used in very‐large‐scale integration semiconductor device technology.

ISSN:0021-8979    

DOI:10.1063/1.345239

出版商:AIP    

年代:1990

数据来源: AIP

摘要:

Partial discharge (PD) measurements have been made under dc applied voltage at atmospheric pressure on polyethylene (PE) and polyvinyl chloride (PVC) foils without intentional defects. An automatic measuring system was used to detect and process PD parameters. Histograms of amplitudes and time intervals between impulses are presented.

ISSN:0021-8979    

DOI:10.1063/1.345240

出版商:AIP    

年代:1990

数据来源: AIP

摘要:

Measurements of the nonlinear refractive index of a GaInAs/InP multiple quantum well structure are reported. Optical absorption data obtained by a pump and probe technique were analyzed using the Kramers–Kro¨nig relations to give index change as a function of wavelength for various pump intensities. The results indicate that optical devices should be realizable in this material system. The importance of saturation of the nonlinearity is demonstrated and the behavior shown to be well described by a simple band filling model.

ISSN:0021-8979    

DOI:10.1063/1.345241

出版商:AIP    

年代:1990

数据来源: AIP

摘要:

TheA,B,Cluminescence system from silicon is believed to originate with the radiative decay of an exciton bound to an isoelectronic trap. It was shown previously by Sauer, Weber, and Zulehner [Appl. Phys. Lett.44, 440 (1984)] that nitrogen is one of the trap constituents. We present experimental evidence that confirms that aluminum is also a trap constituent, suggesting that the trap is an aluminum‐nitrogen pair.

ISSN:0021-8979    

DOI:10.1063/1.345242

出版商:AIP    

年代:1990

数据来源: AIP

摘要:

Critical current densities and upper critical fields were measured for a single crystal of the highTcoxide superconductor, Bi2Sr2CaCu2O8+d, by transport within theabbasal plane and along thecaxis. The anisotropy in critical current densities was observed to beJc⊥/Jc∥=10, in agreement with the anisotropy in resistivity for the normal state. The scaling of the critical current density with the magnetic field was found. The critical current density scaled to zero at fieldsBc2in theabplane and along thecaxis which were in good agreement with the upper critical fields measured by transport.

ISSN:0021-8979    

DOI:10.1063/1.345243

出版商:AIP    

年代:1990

数据来源: AIP