81. |
Effect of photocarriers on surface barrier electroreflectance in MOS capacitor configurations |
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Journal of Applied Physics,
Volume 44,
Issue 12,
1973,
Page 5626-5628
N. Bottka,
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摘要:
Photoexcited carriers redistribute the charges in the space‐charge region of a semiconductor. The wavelength‐dependent photoeffect is most significant at low temperatures and strongly affects the modulating electric field in surface barrier electroreflectance (SBER). This work undertakes a study of this effect on SBER by making concurrent ac capacitance and conductance measurements in the MOS configuration and comparing the results with photoconductivity theory. The relationship between photocapacitance and the effective modulating electric field is investigated, providing herewith a better understanding of SBER at low temperatures.
ISSN:0021-8979
DOI:10.1063/1.1662211
出版商:AIP
年代:1973
数据来源: AIP
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82. |
Submicron thickness calibration of vapor‐deposited SiO2films by infrared spectroscopy |
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Journal of Applied Physics,
Volume 44,
Issue 12,
1973,
Page 5629-5630
J. Wong,
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摘要:
Infrared transmission spectra of a series of SiO2films vapor deposited on silicon from SiH4and O2at 450 °C have been studied as a function of film thickness in the submicron range from 1000 to 9000 Å. Absorbances of band maxima observed in the frequency range 250–1400 cm−1are shown to obey the Lambert‐Bouguer's law in both as‐deposited and heat‐treated (800–1200 °C) materials. Apparent absorption coefficients calculated for the transmission mimima at 1060, 800, and 450 cm−1are 2.5 ± 0.1 × 104, 0.24 ± 0.02 × 104, and 0.74 ± 0.02 × 104cm−1for as‐deposited films and 3.4 ± 0.1 × 104, 0.34 ± 0.02 × 104, and 1.06 ± 0.02 × 104cm−1for heat‐treated films, respectively. The thickness of SiO2films as‐deposited at 450 °C as well as heat treated to 800 °C and above can be determined nondestructively using the present absorbance data.
ISSN:0021-8979
DOI:10.1063/1.1662212
出版商:AIP
年代:1973
数据来源: AIP
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83. |
Instability of screw dislocation pile‐ups |
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Journal of Applied Physics,
Volume 44,
Issue 12,
1973,
Page 5631-5632
N. T. Adelman,
J. Dundurs,
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摘要:
An instability mechanism for a pile‐up of perfect screw dislocations is investigated where the cross‐slip barrier is that of the Peierls‐Nabarro force. The pile‐up is found to reach a state of unstable equilibrium under the condition &tgr;* = 0.66(&mgr;s)1/2, where &tgr;* is the tip stress of the pile‐up, &mgr; the shear modulus, andsthe initial slope of the Peierls force. Satisfaction of this relation will lead to cross slip of the second dislocation resulting in a blunting of the pile‐up tip.
ISSN:0021-8979
DOI:10.1063/1.1662213
出版商:AIP
年代:1973
数据来源: AIP
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84. |
Effect of an organic gas additive on a pulse HF chemical laser |
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Journal of Applied Physics,
Volume 44,
Issue 12,
1973,
Page 5633-5634
R. F. Paulson,
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摘要:
The use of a small amount of xylene as a gas additive to a SF6: H2mixture in an electrically initiated pulse HF chemical laser has been shown to increase laser peak power output. For the experimental conditions of this work, enhancement of output power was seen only for laser medium pressures greater than 200 Torr. A maximum increase in peak power of 60% was observed for a pressure of 300 Torr.
ISSN:0021-8979
DOI:10.1063/1.1662214
出版商:AIP
年代:1973
数据来源: AIP
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85. |
Evanescent field coupling of thin‐film laser and passive waveguide |
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Journal of Applied Physics,
Volume 44,
Issue 12,
1973,
Page 5635-5636
R. K. Watts,
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摘要:
Evanescent field coupling is proposed as a practical way of coupling the output of a thin‐film laser to an optical waveguide. Relevant parameters are estimated for the case of a GaAlAs LOC laser coupled to a guide.
ISSN:0021-8979
DOI:10.1063/1.1662215
出版商:AIP
年代:1973
数据来源: AIP
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86. |
Image force work function of dielectric layers |
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Journal of Applied Physics,
Volume 44,
Issue 12,
1973,
Page 5637-5638
Gerald F. Dionne,
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摘要:
The classical theory of electric images is employed to calculate the image force work function of a dielectric layer on a conducting substrate. Theoretical results indicate that the work function should decrease with layer thickness and increase with dielectric constant. Correlated experimental data are offered in support of these conclusions.
ISSN:0021-8979
DOI:10.1063/1.1662216
出版商:AIP
年代:1973
数据来源: AIP
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87. |
Photoluminescence determinations of Cd diffusion in ZnSe |
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Journal of Applied Physics,
Volume 44,
Issue 12,
1973,
Page 5639-5641
W. E. Martin,
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摘要:
The diffusion constantD(T) of cadmium into single‐crystal zinc selenide was measured using a photoluminescence/etch technique. Diffusions were performed in sealed ampoules using cadmium metal and cadmium selenide powder as dopant sources. For cadmium metal sourcesD(T) = 6.39 × 10−4exp(− 1.87 eV/k T) in the range 700–950 °C.
ISSN:0021-8979
DOI:10.1063/1.1662217
出版商:AIP
年代:1973
数据来源: AIP
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88. |
Filling rates of long liquid‐filled capillaries |
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Journal of Applied Physics,
Volume 44,
Issue 12,
1973,
Page 5642-5643
J. Stone,
H. E. Earl,
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摘要:
Fused quartz capillaries 700 and 1200 m long and 100 &mgr;m in inside diameter have been filled under hydrostatic pressure. It is verified that the rate of filling is governed by Poiseuille's law, which predicts the filled length to be proportional to the square root of the filling time. At a pressure of 270 atm, 250 m was filled in 1 h, 800 m in 10 h, and 1200 m in 21 h. The filling rate cannot be increased significantly from the above values by increasing the pressure because of the increase in the viscosity of the fluid with increasing pressure. Since it requires high pressure to move the liquid in a long capillary, it is apparent that liquid will not flow out of a long capillary that is not under pressure.
ISSN:0021-8979
DOI:10.1063/1.1662218
出版商:AIP
年代:1973
数据来源: AIP
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89. |
Modifications of the theoretical model for a self‐pulsing ring laser |
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Journal of Applied Physics,
Volume 44,
Issue 12,
1973,
Page 5644-5646
C. E. Halford,
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摘要:
The theoretical model for a self‐pulsing ring laser has been modified by confining the active medium to a length less than the cavity length. Some of the results of this modification are reported in this paper. Also, a more general type of loss has been considered and the results are included.
ISSN:0021-8979
DOI:10.1063/1.1662219
出版商:AIP
年代:1973
数据来源: AIP
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90. |
Erratum: Interfacial screw dislocations in anisotropic two‐phase media |
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Journal of Applied Physics,
Volume 44,
Issue 12,
1973,
Page 5647-5647
Y. T. Chou,
C. S. Pande,
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ISSN:0021-8979
DOI:10.1063/1.1662221
出版商:AIP
年代:1973
数据来源: AIP
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