摘要:

This study was carried out to obtain some information on the adequacy of the assumptions in an exothermic model, which was proposed for explaining the experimental observation of the sensitivity of the thermoluminescence dosimeter. It is expected from the model that the sensitivity is presented as both increasing and decreasing functions of irradiation temperature. This expected phenomenon was experimentally verified. Further, supralinearity and sublinearity of the thermoluminescence response to the dose could be qualitatively explained with the model. These results lead to the conclusion that the assumptions in the exothermic model are supported.

ISSN:0021-8979    

DOI:10.1063/1.324551

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

We describe measurements ona‐Si films made by adding atomic hydrogen during evaporation of silicon. The material has conductivity comparable to that formed by silane decomposition and is also photoconducting. The photocurrent in these initial experiments is smaller than in the bes silane‐produced films.

ISSN:0021-8979    

DOI:10.1063/1.324521

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

Boron films have been bombarded by He+and H+ions in the medium keV energy range at room temperature. The sputtering yields have been measured for doses of 1017–1018ions/cm2using a low‐energy nuclear‐reaction method,11B(p,&agr;) &agr;&agr;, near the 163‐keV resonance, and distinguished from the erosion induced by blistering and flaking. No significant differences are found between experimental values and theoretical predictions, in contrast to the case of heavy targets bombarded by light ions.

ISSN:0021-8979    

DOI:10.1063/1.324522

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

From a novel solution composed of H3PO4, Nd2O3, and K2CO3, KNdP4O12laser crystals were grown, and the KNdP4O12laser waveguide was successfully fabricated on a KLaP4O12substrate by liquid‐phase epitaxy using the solution. A laser oscillation at 1.05 &mgr;m was obtained with an Ar laser coaxial pumping at room temperature. The crystal growth and epitaxy processes are mainly described.

ISSN:0021-8979    

DOI:10.1063/1.324523

出版商:AIP    

年代:1978

数据来源: AIP

摘要:

Low noise avalanche photodiodes, which have ann+‐p‐&pgr;‐p+structure, are reported. Channeled boron ions (800 keV) in the ⟨110⟩ of Si are used for forming theplayer. The characteristics of this diode are compared with those fabricated by 800‐keV random implantation. Low excess noise factorsF=4–5 at a gain of 100 are obtained by using ⟨110⟩ channeled implantation, whereasF=6–7 for random implantation. By using parallel implantation, the uniformity of channeled distributions of boron ions are found to be fairly good at different locations in a wafer.

ISSN:0021-8979    

DOI:10.1063/1.324524

出版商:AIP    

年代:1978

数据来源: AIP

ISSN:0021-8979    

DOI:10.1063/1.325568

出版商:AIP    

年代:1978

数据来源: AIP