摘要:

This letter reports a recent experiment on resonant interband tunneling (RIT) diodes and the measured room temperature peak‐to‐valley (P/V) current ratio of 104:1 which represents the highest P/V ratio ever reported in any tunneling device. The RIT diode studied in this work consists of an InGaAs/InAlAs double‐quantum well system embedded in apnjunction structure grown on InP.

ISSN:0021-8979    

DOI:10.1063/1.353231

出版商:AIP    

年代:1993

数据来源: AIP

摘要:

Based on the two correct asymptotic forms of the reduced Fermi energy &eegr;, its simple accurate approximate expression for any reduced carrier density is proposed. It is suggested that (i) its maximal relative error in absolute value is found to be equal to 2.11×10−4at fairly large &eegr; (=3.6), (ii) and, in particular, in the neighborhood of &eegr;=0, its relative errors in absolute values are small and regular, while whose obtained from the formulas by Nilsson [Phys. Status Solidi A19, K75 (1973)], and Chang and Izabelle [J. Appl. Phys.65, 2162 (1989)] are found to be large and unstable to different degrees.

ISSN:0021-8979    

DOI:10.1063/1.353232

出版商:AIP    

年代:1993

数据来源: AIP

摘要:

Ferroelectric BaTiO3thin films were grown on Si(100) substrates at a temperature of 600 °C byinsitumetalorganic chemical vapor deposition. X‐ray diffraction and transmission electron microscopy results suggested that the ⟨110⟩ direction of the BaTiO3preferred oriented films is parallel with the (100) direction of the Si substrates. Auger electron spectroscopy measurements showed that the compositions of the as‐grown films were with a uniform distribution throughout the thickness of the films and with a sharp interface. These results indicate that the failure to obtain BaTiO3epitaxial films was due to the formation of an interfacial amorphous layer prior to the creation of the films.  

ISSN:0021-8979    

DOI:10.1063/1.353233

出版商:AIP    

年代:1993

数据来源: AIP

摘要:

Glass waveguides, in a geometry of air–SiO2–Au, were monolithically integrated with graded‐index separate confinement heterostructure single quantum well AlGaAs/GaAs lasers. A ridged glass waveguide was fabricated and single mode operation was observed from the output of the glass waveguide. Efficient optical coupling of more than 50% between the glass waveguide and the semiconductor laser was achieved with very low propagation loss in the waveguide. A propagation loss as low as 0.44 cm−1was predicted theoretically. The waveguide process, which has the potential to achieve wafer scale integration of optoelectronic devices, is a simple extension of the conventional optoelectronic device processes and can be readily incorporated in the photonic integrated circuit processes.

ISSN:0021-8979    

DOI:10.1063/1.353234

出版商:AIP    

年代:1993

数据来源: AIP